Nikita Gordeev
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Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
NN Ledentsov, VA Shchukin, M Grundmann, N Kirstaedter, J B÷hrer, ...
Physical Review B 54 (12), 8743, 1996
Negative characteristic temperature of InGaAs quantum dot injection laser
AE Zhukov, VM Ustinov, AY Egorov, AR Kovsh, AF Tsatsul, NN Ledentsov, ...
Japanese journal of applied physics 36 (6S), 4216, 1997
Low-threshold injection lasers based on vertically coupled quantum dots
VM Ustinov, AY Egorov, AR Kovsh, AE Zhukov, MV Maximov, ...
Journal of crystal growth 175, 689-695, 1997
InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature
MV Maximov, IV Kochnev, YM Shernyakov, SV Zaitsev, NY Gordeev, ...
Jpn. J. Appl. Phys 36, 4221-4223, 1997
Low threshold quantum dot injection laser emitting at 1.9 Ám
VM Ustinov, AE Zhukov, AY Egorov, AR Kovsh, SV Zaitsev, NY Gordeev, ...
Electronics letters 34 (7), 670-672, 1998
High-power single mode (> 1W) continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence
II Novikov, NY Gordeev, YM Shernyakov, YY Kiselev, MV Maximov, ...
Applied Physics Letters 92 (10), 2008
Light emitting devices based on quantum well-dots
MV Maximov, AM Nadtochiy, SA Mintairov, NA Kalyuzhnyy, ...
Applied Sciences 10 (3), 1038, 2020
A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds
ZI Alferov, NY Gordeev, SV Zaitsev, PS Kop'ev, IV Kochnev, VV Komin, ...
Semiconductors 30 (2), 197-200, 1996
Transverse single-mode edge-emitting lasers based on coupled waveguides
NY Gordeev, AS Payusov, YM Shernyakov, SA Mintairov, NA Kalyuzhnyy, ...
Optics Letters 40 (9), 2150-2152, 2015
A 1.33 Ám InAs/GaAs quantum dot laser with a 46 cm− 1 modal gain
MV Maximov, VM Ustinov, AE Zhukov, NV Kryzhanovskaya, AS Payusov, ...
Semiconductor science and technology 23 (10), 105004, 2008
Metamorphic 1.5 Ám-range quantum dot lasers on a GaAs substrate
LY Karachinsky, T Kettler, II Novikov, YM Shernyakov, NY Gordeev, ...
Semiconductor science and technology 21 (5), 691, 2006
Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
LY Karachinsky, S Pellegrini, GS Buller, AS Shkolnik, NY Gordeev, ...
Applied physics letters 84 (1), 7-9, 2004
Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
AE Zhukov, VM Ustinov, AY Egorov, AR Kovsh, AF Tsatsul’nikov, ...
Journal of electronic materials 27, 106-109, 1998
High-power low-beam divergence edge-emitting semiconductor lasers with 1-and 2-D photonic bandgap crystal waveguide
MV Maximov, YM Shernyakov, II Novikov, LY Karachinsky, NY Gordeev, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1113-1122, 2008
High-power singlemode CW operation of 1.5 Ám-range quantum dot GaAs-based laser
LY Karachinsky, T Kettler, NY Gordeev, II Novikov, MV Maximov, ...
Electronics Letters 41 (8), 1, 2005
High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
MV Maximov, YM Shernyakov, II Novikov, SM Kuznetsov, LY Karachinsky, ...
IEEE journal of quantum electronics 41 (11), 1341-1348, 2005
High-power high-brightness semiconductor lasers based on novel waveguide concepts
D Bimberg, K Posilovic, V Kalosha, T Kettler, D Seidlitz, VA Shchukin, ...
Novel In-Plane Semiconductor Lasers IX 7616, 321-334, 2010
Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers
II Novikov, NY Gordeev, LY Karachinskii, MV Maksimov, YM Shernyakov, ...
Semiconductors 39, 477-480, 2005
Tilted wave lasers: A way to high brightness sources of light
V Shchukin, N Ledentsov, K Posilovic, V Kalosha, T Kettler, D Seidlitz, ...
IEEE Journal of Quantum Electronics 47 (7), 1014-1027, 2011
Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 C
MV Maksimov, NY Gordeev, SV Zaitsev, PS Kop’ev, IV Kochnev, ...
Semiconductors 31, 124-126, 1997
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