| Recent advances in physical reservoir computing: A review G Tanaka, T Yamane, JB Héroux, R Nakane, N Kanazawa, S Takeda, ... Neural Networks 115, 100-123, 2019 | 1433 | 2019 |
| Molecular beam epitaxial growth of InGaAsN: Sb/GaAs quantum wells for long-wavelength semiconductor lasers X Yang, MJ Jurkovic, JB Heroux, WI Wang Applied Physics Letters 75 (2), 178-180, 1999 | 249 | 1999 |
| InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy X Yang, JB Heroux, LF Mei, WI Wang Applied Physics Letters 78 (26), 4068-4070, 2001 | 160 | 2001 |
| GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm JB Heroux, X Yang, WI Wang Applied physics letters 75 (18), 2716-2718, 1999 | 144 | 1999 |
| High-temperature characteristics of 1.3 μm InGaAsN: Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy X Yang, JB Heroux, MJ Jurkovic, WI Wang Applied Physics Letters 76 (7), 795-797, 2000 | 83 | 2000 |
| CO2 laser‐assisted removal of submicron particles from solid surfaces JB Heroux, S Boughaba, I Ressejac, E Sacher, M Meunier Journal of applied physics 79 (6), 2857-2862, 1996 | 70 | 1996 |
| Photoreflectance spectroscopy of strained (In) GaAsN/GaAs multiple quantum wells JB Heroux, X Yang, WI Wang Journal of applied physics 92 (8), 4361-4366, 2002 | 64 | 2002 |
| Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy X Yang, JB Heroux, MJ Jurkovic, WI Wang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 59 | 1999 |
| Nonparabolicity of the conduction band of wurtzite GaN S Syed, JB Heroux, YJ Wang, MJ Manfra, RJ Molnar, HL Stormer Applied physics letters 83 (22), 4553-4555, 2003 | 54 | 2003 |
| Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant X Yang, MJ Jurkovic, JB Heroux, WI Wang The Institution of Engineering and Technology (The IET), 1999 | 51 | 1999 |
| Mode locked and Q-switched Cr: ZnSe laser using a semiconductor saturable absorbing mirror (SESAM) CR Pollock, NA Brilliant, D Gwin, TJ Carrig, WJ Alford, JB Heroux, ... Advanced Solid-State Photonics, 252, 2005 | 43 | 2005 |
| InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices W Li, JB Heroux, WI Wang Journal of applied physics 94 (7), 4248-4250, 2003 | 43 | 2003 |
| Energy-efficient 1060-nm optical link operating up to 28 Gb/s JB Héroux, T Kise, M Funabashi, T Aoki, CL Schow, AV Rylyakov, ... Journal of Lightwave Technology 33 (4), 733-740, 2015 | 39 | 2015 |
| Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers W Li, JB Héroux, H Shao, WI Wang Applied physics letters 84 (12), 2016-2018, 2004 | 30 | 2004 |
| Terahertz radiation emission from GaMnAs JB Héroux, Y Ino, M Kuwata-Gonokami, Y Hashimoto, S Katsumoto Applied physics letters 88 (22), 2006 | 28 | 2006 |
| High quality GaAs grown on Si-on-insulator compliant substrates CW Pei, JB Héroux, J Sweet, WI Wang, J Chen, MF Chang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 27 | 2002 |
| Double mirror structure for wavelength division multiplexing with polymer waveguides JB Héroux US Patent 9,086,551, 2015 | 23 | 2015 |
| High performance 1.3 μm InGaAsN: Sb/GaAs quantum well lasers grown by molecular beam epitaxy X Yang, JB Heroux, MJ Jurkovic, WI Wang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 22 | 2000 |
| GaN grown by molecular beam epitaxy with antimony as surfactant CW Pei, B Turk, JB Héroux, WI Wang Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 21 | 2001 |
| Highly periodic, three-dimensionally arranged InGaAsN: Sb quantum dot arrays fabricated nonlithographically for optical devices N Kouklin, H Chik, J Liang, M Tzolov, JM Xu, JB Heroux, WI Wang Journal of Physics D: Applied Physics 36 (21), 2634, 2003 | 20 | 2003 |
