| Water-soluble thin film transistors and circuits based on amorphous indium–gallium–zinc oxide SH Jin, SK Kang, IT Cho, SY Han, HU Chung, DJ Lee, J Shin, GW Baek, ... ACS applied materials & interfaces 7 (15), 8268-8274, 2015 | 127 | 2015 |
| Highly selective ZnO gas sensor based on MOSFET having a horizontal floating-gate Y Hong, CH Kim, J Shin, KY Kim, JS Kim, CS Hwang, JH Lee Sensors and Actuators B: Chemical 232, 653-659, 2016 | 82 | 2016 |
| A new gas sensor based on MOSFET having a horizontal floating-gate CH Kim, IT Cho, JM Shin, KB Choi, JK Lee, JH Lee IEEE Electron Device Letters 35 (2), 265-267, 2013 | 71 | 2013 |
| Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics SH Jin, J Shin, IT Cho, SY Han, DJ Lee, CH Lee, JH Lee, JA Rogers Applied Physics Letters 105 (1), 2014 | 61 | 2014 |
| Observation of physisorption in a high-performance FET-type oxygen gas sensor operating at room temperature S Hong, J Shin, Y Hong, M Wu, D Jang, Y Jeong, G Jung, JH Bae, ... Nanoscale 10 (37), 18019-18027, 2018 | 48 | 2018 |
| Gas sensing characteristics of the FET-type gas sensor having inkjet-printed WS2 sensing layer Y Jeong, J Shin, Y Hong, M Wu, S Hong, KC Kwon, S Choi, T Lee, ... Solid-State Electronics 153, 27-32, 2019 | 44 | 2019 |
| Gas-sensing characteristics of exfoliated WSe2 field-effect transistors Y Hong, WM Kang, IT Cho, J Shin, M Wu, JH Lee Journal of Nanoscience and Nanotechnology 17 (5), 3151-3154, 2017 | 38 | 2017 |
| An FET-type gas sensor with a sodium ion conducting solid electrolyte for CO2 detection M Wu, J Shin, Y Hong, D Jang, X Jin, HI Kwon, JH Lee Sensors and Actuators B: Chemical 259, 1058-1065, 2018 | 26 | 2018 |
| An accurate and stable humidity sensing characteristic of Si FET-type humidity sensor with MoS2 as a sensing layer by pulse measurement J Shin, Y Hong, M Wu, JH Bae, HI Kwon, BG Park, JH Lee Sensors and Actuators B: Chemical 258, 574-579, 2018 | 19 | 2018 |
| Highly improved response and recovery characteristics of Si FET-type gas sensor using pre-bias J Shin, Y Hong, M Wu, Y Jang, JS Kim, BG Park, CS Hwang, JH Lee 2016 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2016 | 18 | 2016 |
| Effect of a pre-bias on the adsorption and desorption of oxidizing gases in FET-type sensor M Wu, CH Kim, J Shin, Y Hong, X Jin, JH Lee Sensors and Actuators B: Chemical 245, 122-128, 2017 | 17 | 2017 |
| Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT JH Bae, I Hwang, JM Shin, HI Kwon, CH Park, J Ha, JW Lee, H Choi, ... 2012 International Electron Devices Meeting, 13.2. 1-13.2. 4, 2012 | 17 | 2012 |
| Humidity-sensitive field effect transistor with In2O3 nanoparticles as a sensing layer S Hong, J Shin, Y Hong, M Wu, Y Jeong, D Jang, G Jung, JH Bae, JH Lee Journal of Nanoscience and Nanotechnology 19 (10), 6656-6662, 2019 | 15 | 2019 |
| Pulse biasing scheme for the fast recovery of FET-type gas sensors for reducing gases M Wu, J Shin, Y Hong, X Jin, JH Lee IEEE Electron Device Letters 38 (7), 971-974, 2017 | 13 | 2017 |
| Analysis of DC/transient current and RTN behaviors related to traps in p-GaN gate HEMT JH Bae, S Hwang, J Shin, HI Kwon, CH Park, H Choi, JB Park, J Kim, J Ha, ... 2013 IEEE International Electron Devices Meeting, 31.6. 1-31.6. 4, 2013 | 10 | 2013 |
| A wide detection range mercury ion sensor using Si MOSFET having single-walled carbon nanotubes as a sensing layer J Shin, Y Hong, M Wu, JH Lee IEEE Electron Device Letters 38 (7), 959-962, 2017 | 8 | 2017 |
| Suppression of Drift in FET-type Gas Sensor Having WS2 Nanoparticles Using Pulse Measurement Y Jeong, J Shin, Y Hong, M Wu, S Hong, D Jang, K Chang, SC Kwon, ... VCG 10 (10), 10-9, 2018 | 2 | 2018 |
| Analysis of Current Fluctuation Due to Trap and Percolation Path in Nano-Scale Bulk FinFET KB Choi, J Shin, JH Lee Journal of Nanoscience and Nanotechnology 16 (5), 4803-4807, 2016 | 1 | 2016 |
| Pulse operating method for FET-type sensor having horizontal floating gate JS Jong-ho Lee US Patent US10156542B2, 2018 | | 2018 |
| Effect of APTES Layer on I-V Characteristics of MOSFET-type Gas Sensor Having Solid Electrolyte Sensing Material JHL Meile Wu , Jongmin Shin , Yoonki Hong , Xiaoshi Jin NANO KOREA 2016, 2016 | | 2016 |
Jong-Ho LeeDepartment of Electrical and Computer Engineering, Seoul National UniversityVerified email at snu.ac.kr
