Edward Preble
Edward Preble
Verified email at rti.org - Homepage
Cited by
Cited by
Non-polar and semi-polar GaN substrates, devices, and methods for making them
AD Hanser, EA Preble, L Liu, TL Clites, KR Evans
US Patent 7,727,874, 2010
Structural TEM study of nonpolar a-plane gallium nitride grown on (11 2 0) 4 H-SiC by organometallic vapor phase epitaxy
DN Zakharov, Z Liliental-Weber, B Wagner, ZJ Reitmeier, EA Preble, ...
Physical Review B 71 (23), 235334, 2005
Method for making group III nitride articles
AD Hanser, L Liu, EA Preble, D Tsvetkov, NM Williams, X Xu
US Patent 8,435,879, 2013
Accurate dependence of gallium nitride thermal conductivity on dislocation density
C Mion, JF Muth, EA Preble, D Hanser
Applied Physics Letters 89 (9), 092123, 2006
Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement
EA Preble, L Liu, AD Hanser, NM Williams, X Xu
US Patent 7,897,490, 2011
GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition
JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ...
Applied physics letters 89 (1), 011112, 2006
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen
Scientific reports 3 (1), 1-6, 2013
Green light emitting diodes on -plane GaN bulk substrates
T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ...
Applied Physics Letters 92 (24), 241109, 2008
High-quality bulk -plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on -plane sapphire
T Paskova, R Kroeger, S Figge, D Hommel, V Darakchieva, B Monemar, ...
Applied physics letters 89 (5), 051914, 2006
Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier
Y Zhou, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ...
Journal of applied physics 101 (2), 024506, 2007
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
RF Davis, T Gehrke, KJ Linthicum, TS Zheleva, EA Preble, P Rajagopal, ...
Journal of crystal growth 225 (2-4), 134-140, 2001
Surface preparation of substrates from bulk GaN crystals
D Hanser, M Tutor, E Preble, M Williams, X Xu, D Tsvetkov, L Liu
Journal of Crystal Growth 305 (2), 372-376, 2007
Gallium nitride and related materials: challenges in materials processing
RF Davis, S Einfeldt, EA Preble, AM Roskowski, ZJ Reitmeier, PQ Miraglia
Acta Materialia 51 (19), 5961-5979, 2003
Wavelength-stable cyan and green light emitting diodes on nonpolar -plane GaN bulk substrates
T Detchprohm, M Zhu, Y Li, L Zhao, S You, C Wetzel, EA Preble, ...
Applied Physics Letters 96 (5), 051101, 2010
Light-emitting diode development on polar and non-polar GaN substrates
C Wetzel, M Zhu, J Senawiratne, T Detchprohm, PD Persans, L Liu, ...
Journal of Crystal Growth 310 (17), 3987-3991, 2008
Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate
Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ...
Solid-state electronics 52 (5), 756-764, 2008
Gallium nitride materials-progress, status, and potential roadblocks
RF Davis, AM Roskowski, EA Preble, JS Speck, B Heying, JA Freitas, ...
Proceedings of the IEEE 90 (6), 993-1005, 2002
Conventional and pendeo-epitaxial growth of GaN (0 0 0 1) thin films on Si (1 1 1) substrates
RF Davis, T Gehrke, KJ Linthicum, E Preble, P Rajagopal, C Ronning, ...
Journal of crystal growth 231 (3), 335-341, 2001
High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates
DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC (0001) and Si (111) substrates
RF Davis, T Gehrke, KJ Linthicum, P Rajagopal, AM Roskowski, ...
Materials Research Society Internet Journal of Nitride Semiconductor Research 6, 2001
The system can't perform the operation now. Try again later.
Articles 1–20