| Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates JS Moon, D Curtis, M Hu, D Wong, C McGuire, PM Campbell, G Jernigan, ... IEEE Electron Device Letters 30 (6), 650-652, 2009 | 433 | 2009 |
| Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition ER Glaser, TA Kennedy, K Doverspike, LB Rowland, DK Gaskill, ... Physical Review B 51 (19), 13326, 1995 | 397 | 1995 |
| Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy W Qian, M Skowronski, M De Graef, K Doverspike, LB Rowland, ... Applied physics letters 66 (10), 1252-1254, 1995 | 353 | 1995 |
| Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene X Cai, AB Sushkov, RJ Suess, MM Jadidi, GS Jenkins, LO Nyakiti, ... Nature nanotechnology 9 (10), 814, 2014 | 307 | 2014 |
| Formation of high Tc superconducting films by organometallic chemical vapor deposition AD Berry, DK Gaskill, RT Holm, EJ Cukauskas, R Kaplan, RL Henry Applied physics letters 52 (20), 1743-1745, 1988 | 285 | 1988 |
| Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy W Qian, GS Rohrer, M Skowronski, K Doverspike, LB Rowland, ... Applied physics letters 67 (16), 2284-2286, 1995 | 249 | 1995 |
| Microwave performance of GaN MESFETS SC Binari, LB Rowland, W Kruppa, G Kelner, K Doverspike, DK Gaskill Electronics letters 30 (15), 1248-1249, 1994 | 234 | 1994 |
| Technique for the dry transfer of epitaxial graphene onto arbitrary substrates JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ... ACS nano 4 (2), 1108-1114, 2010 | 212 | 2010 |
| Hall effect mobility of epitaxial graphene grown on silicon carbide JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ... Applied Physics Letters 95 (12), 122102, 2009 | 201 | 2009 |
| Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ... Nano letters 9 (8), 2873-2876, 2009 | 194 | 2009 |
| Modulation spectroscopy as a tool for electronic material characterization N Bottka, DK Gaskill, RS Sillmon, R Henry, R Glosser Journal of electronic materials 17 (2), 161-170, 1988 | 176 | 1988 |
| Quantum linear magnetoresistance in multilayer epitaxial graphene AL Friedman, JL Tedesco, PM Campbell, JC Culbertson, E Aifer, ... Nano letters 10 (10), 3962-3965, 2010 | 175 | 2010 |
| Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ... IEEE Electron Device Letters 31 (4), 260-262, 2010 | 161 | 2010 |
| Silicon carbide as a platform for power electronics CR Eddy, DK Gaskill Science 324 (5933), 1398-1400, 2009 | 161 | 2009 |
| Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production GG Jernigan, BL VanMil, JL Tedesco, JG Tischler, ER Glaser, ... Nano letters 9 (7), 2605-2609, 2009 | 149 | 2009 |
| Electrical characterisation of Ti Schottky barriers on n-type GaN SC Binari, HB Dietrich, G Kelner, LB Rowland, K Doverspike, DK Gaskill Electronics letters 30 (11), 909-911, 1994 | 143 | 1994 |
| In situ, real-time diagnostics of OMVPE using IR-diode laser spectroscopy JE Butler, N Bottka, RS Sillmon, DK Gaskill Journal of Crystal Growth 77 (1-3), 163-171, 1986 | 133 | 1986 |
| Band‐gap determination by photoreflectance of InGaAs and InAlAs lattice matched to InP DK Gaskill, N Bottka, L Aina, M Mattingly Applied physics letters 56 (13), 1269-1271, 1990 | 131 | 1990 |
| Magneto‐optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance YJ Wang, R Kaplan, HK Ng, K Doverspike, DK Gaskill, T Ikedo, I Akasaki, ... Journal of applied physics 79 (10), 8007-8010, 1996 | 130 | 1996 |
| Chemical vapor deposition experiments using new fluorinated acetylacetonates of calcium, strontium, and barium AP Purdy, AD Berry, RT Holm, M Fatemi, DK Gaskill Inorganic Chemistry 28 (14), 2799-2803, 1989 | 130 | 1989 |
Brenda VanMilUS Army Research LaboratoryVerified email at mail.mil
