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Taleana Huff
Taleana Huff
Canadian Bank Note Company
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Title
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Cited by
Year
Binary atomic silicon logic
T Huff, H Labidi, M Rashidi, L Livadaru, T Dienel, R Achal, W Vine, ...
Nature Electronics 1 (12), 636-643, 2018
642018
Lithography for robust and editable atomic-scale silicon devices and memories
R Achal, M Rashidi, J Croshaw, D Churchill, M Taucer, T Huff, M Cloutier, ...
Nature communications 9 (1), 1-8, 2018
582018
Atomic white-out: Enabling atomic circuitry through mechanically induced bonding of single hydrogen atoms to a silicon surface
TR Huff, H Labidi, M Rashidi, M Koleini, R Achal, MH Salomons, ...
ACS nano 11 (9), 8636-8642, 2017
532017
Initiating and monitoring the evolution of single electrons within atom-defined structures
M Rashidi, W Vine, T Dienel, L Livadaru, J Retallick, T Huff, K Walus, ...
Physical review letters 121 (16), 166801, 2018
352018
Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface
H Labidi, M Koleini, T Huff, M Salomons, M Cloutier, J Pitters, RA Wolkow
Nature communications 8 (1), 1-7, 2017
312017
Electrostatic landscape of a hydrogen-terminated silicon surface probed by a moveable quantum dot
TR Huff, T Dienel, M Rashidi, R Achal, L Livadaru, J Croshaw, RA Wolkow
ACS nano 13 (9), 10566-10575, 2019
242019
SiQAD: A design and simulation tool for atomic silicon quantum dot circuits
SSH Ng, J Retallick, HN Chiu, R Lupoiu, L Livadaru, T Huff, M Rashidi, ...
IEEE Transactions on Nanotechnology 19, 137-146, 2020
202020
Resolving and tuning carrier capture rates at a single silicon atom gap state
M Rashidi, E Lloyd, TR Huff, R Achal, M Taucer, JJ Croshaw, RA Wolkow
ACS nano 11 (11), 11732-11738, 2017
172017
New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant
H Labidi, M Kupsta, T Huff, M Salomons, D Vick, M Taucer, J Pitters, ...
Ultramicroscopy 158, 33-37, 2015
132015
Atomic defect classification of the H–Si (100) surface through multi-mode scanning probe microscopy
J Croshaw, T Dienel, T Huff, R Wolkow
Beilstein journal of nanotechnology 11 (1), 1346-1360, 2020
92020
Detecting and Directing Single Molecule Binding Events on H-Si (100) with Application to Ultradense Data Storage
R Achal, M Rashidi, J Croshaw, TR Huff, RA Wolkow
ACS nano 14 (3), 2947-2955, 2019
62019
Ionic charge distributions in silicon atomic surface wires
J Croshaw, T Huff, M Rashidi, J Wood, E Lloyd, J Pitters, RA Wolkow
Nanoscale 13 (5), 3237-3245, 2021
32021
Atomic defects of the hydrogen-terminated Silicon (100)-2x1 surface imaged with STM and nc-AFM
J Croshaw, T Dienel, T Huff, RA Wolkow
arXiv preprint arXiv:2002.09138, 2020
12020
Initiating and monitoring the evolution of single electrons within atom-defined structures
R Wolkow, M Rashidi, W Vine, T Dienel, L Livadaru, H Taleana, ...
US Patent App. 17/361,683, 2021
2021
Lithography for editable atomic-scale devices and memories
R Achal, RA Wolkow, J Pitters, M Cloutier, M Rashidi, M Taucer, ...
US Patent App. 17/253,768, 2021
2021
Initiating and monitoring the evolution of single electrons within atom-defined structures
R Wolkow, M Rashidi, W Vine, T Dienel, L Livadaru, H Taleana, ...
US Patent 11,047,877, 2021
2021
Multiple germanium atom quantum dot and devices inclusive thereof
RA Wolkow, R Achal, H Taleana, H Labidi, L Livadaru, P Paul, M Rashidi
US Patent App. 17/167,295, 2021
2021
Multiple silicon atom quantum dot and devices inclusive thereof
RA Wolkow, R Achal, H Taleana, H Labidi, L Livadaru, P Paul, M Rashidi
US Patent 10,937,959, 2021
2021
Atomic Defects of the Hydrogen-Terminated Silicon Surface Imaged with nc-AFM
J Croshaw, T Dienel, T Huff, R Wolkow
Bulletin of the American Physical Society 65, 2020
2020
Atomic Electronics With Silicon Dangling Bonds: Error Correction, Logical Gates, and Electrostatic Environment
T Huff
2020
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