Travis J. Anderson
Travis J. Anderson
Verified email at nrl.navy.mil
TitleCited byYear
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
2122010
Film on Graphene on a Substrate and Method and Devices Therefor
F Kub, T Anderson, M Mastro
US Patent App. 13/310,347, 2012
1602012
Quantifying pulsed laser induced damage to graphene
M Currie, JD Caldwell, FJ Bezares, J Robinson, T Anderson, H Chun, ...
Applied Physics Letters 99 (21), 211909, 2011
1152011
Room temperature hydrogen detection using Pd-coated GaN nanowires
W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ...
Applied Physics Letters 93 (7), 072109, 2008
1142008
Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices
T Anderson, F Ren, S Pearton, BS Kang, HT Wang, CY Chang, J Lin
Sensors 9 (6), 4669-4694, 2009
862009
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE Electron Device Letters 33 (1), 23-25, 2011
852011
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE Electron Device Letters 33 (1), 23-25, 2011
852011
Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
JD Caldwell, KD Hobart, T Anderson, FJ Kub
US Patent 8,753,468, 2014
842014
Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
JD Caldwell, KD Hobart, T Anderson, FJ Kub
US Patent 8,753,468, 2014
842014
Graphene on semiconductor detector
FJ Kub, T Anderson, KD Hobart
US Patent 8,872,159, 2014
812014
Graphene on Semiconductor Detector
FJ Kub, T Anderson, KD Hobart
US Patent 20,130,082,241, 2013
812013
Transistor with enhanced channel charge inducing material layer and threshold voltage control
FJ Kub, KD Hobart, CR Eddy Jr, MA Mastro, T Anderson
US Patent 8,384,129, 2013
722013
Transistor with enhanced channel charge inducing material layer and threshold voltage control
FJ Kub, KD Hobart, CR Eddy Jr, MA Mastro, T Anderson
US Patent 8,384,129, 2013
722013
Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors
X Yu, C Li, ZN Low, J Lin, TJ Anderson, HT Wang, F Ren, YL Wang, ...
Sensors and Actuators B: Chemical 135 (1), 188-194, 2008
632008
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ...
Journal of Crystal Growth 350 (1), 21-26, 2012
622012
Robust detection of hydrogen using differential high electron mobility transistor sensing diodes
HT Wang, TJ Anderson, F Ren, C Li, ZN Low, J Lin, BP Gila, SJ Pearton, ...
Applied physics letters 89 (24), 242111, 2006
572006
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ...
Electronics Letters 50 (3), 197-198, 2014
562014
Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
J Anaya, S Rossi, M Alomari, E Kohn, L Tóth, B Pécz, KD Hobart, ...
Acta Materialia 103, 141-152, 2016
542016
Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation
TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ...
IEEE Electron Device Lett. 35 (8), 826-828, 2014
522014
III-nitride P-channel field effect transistor with hole carriers in the channel
FJ Kub, TJ Anderson, AD Koehler, KD Hobart
US Patent 9,006,791, 2015
462015
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Articles 1–20