Cosimo Gerardi
Cosimo Gerardi
Head of Innovation - Chief Technology Officer - 3SUN Gigafactory - Enel Green Power
Verified email at
Cited by
Cited by
Tungsten trioxide (WO3) sputtered thin films for a NOx gas sensor
M Penza, MA Tagliente, L Mirenghi, C Gerardi, C Martucci, G Cassano
Sensors and Actuators B: Chemical 50 (1), 9-18, 1998
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
Silicon nanocrystal memories
S Lombardo, B De Salvo, C Gerardi, T Baron
Microelectronic Engineering 72 (1-4), 388-394, 2004
Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 377-389, 2004
Degradation and hard breakdown transient of thin gate oxides in capacitors: Dependence on oxide thickness
S Lombardo, A La Magna, C Spinella, C Gerardi, F Crupi
Journal of applied physics 86 (11), 6382-6391, 1999
Study of data retention for nanocrystal Flash memories
CM Compagnoni, D Ielmini, AS Spinelli, AL Lacaita, C Previtali, C Gerardi
2003 IEEE International Reliability Physics Symposium Proceedings, 2003á…, 2003
Boron carbon nitride films deposited by sequential pulses laser deposition
M Dinescu, A Perrone, AP Caricato, L Mirenghi, C Gerardi, C Ghica, ...
Applied surface science 127, 692-696, 1998
Nanocrystal memories for FLASH device applications
G Ammendola, V Ancarani, V Triolo, M Bileci, D Corso, I Crupi, L Perniola, ...
Solid-State Electronics 48 (9), 1483-1488, 2004
Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals
G Ammendola, M Vulpio, M Bileci, N Nastasi, C Gerardi, G Renna, I Crupi, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometerá…, 2002
GaN thin films deposition by laser ablation of liquid Ga target in nitrogen reactive atmosphere
M Dinescu, P Verardi, C Boulmer-Leborgne, C Gerardi, L Mirenghi, ...
Applied surface science 127, 559-563, 1998
Nucleation kinetics of Si quantum dots on
G Nicotra, RA Puglisi, S Lombardo, C Spinella, M Vulpio, G Ammendola, ...
Journal of Applied Physics 95 (4), 2049-2055, 2004
Program/erase dynamics and channel conduction in nanocrystal memories
CM Compagnoni, D Ielmini, AS Spinelli, AL Lacaita, C Gerardi, L Perniola, ...
IEEE International Electron Devices Meeting 2003, 22.4. 1-22.4. 4, 2003
Method of forming polymeric layers of silicon oxynitride
M Vulpio, C Gerardi
US Patent App. 09/796,723, 2001
AlN thin films deposition by laser ablation of Al target in nitrogen reactive atmosphere
P Verardi, M Dinescu, C Gerardi, L Mirenghi, V Sandu
Applied surface science 109, 371-375, 1997
High fluence implantation in glasses: chemical interactions
P Mazzoldi, F Caccavale, E Cattaruzza, A Boscolo-Boscoletto, ...
Nuclear Instruments and Methods in Physics Research Section B: Beamá…, 1992
Efficient flexible thin film silicon module on plastics for indoor energy harvesting
M Foti, C Tringali, A Battaglia, N Sparta, S Lombardo, C Gerardi
Solar energy materials and solar cells 130, 490-494, 2014
Observation of the nucleation kinetics of Si quantum dots on SiO2 by energy filtered transmission electron microscopy
G Nicotra, S Lombardo, C Spinella, G Ammendola, C Gerardi, C Demuro
Applied Surface Science 205 (1-4), 304-308, 2003
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies
N Lovergine, M Longo, P Prete, C Gerardi, L Calcagnile, R Cingolani, ...
Journal of applied physics 81 (2), 685-692, 1997
Structural and optical studies of InxGa1−xAs/GaAs multiple quantum wells
M Di Dio, M Lomascolo, A Passaseo, C Gerardi, C Giannini, A Quirini, ...
Journal of applied physics 80 (1), 482-489, 1996
Physical properties of osmium doped tin oxide thin films
R Rella, P Siciliano, L Vasanelli, C Gerardi, A Licciulli
Journal of applied physics 83 (4), 2369-2371, 1998
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