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Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization
S Hatayama, Y Sutou, S Shindo, Y Saito, YH Song, D Ando, J Koike
ACS applied materials & interfaces 10 (3), 2725-2734, 2018
932018
Reversible displacive transformation in MnTe polymorphic semiconductor
S Mori, S Hatayama, Y Shuang, D Ando, Y Sutou
Nature Communications 11 (1), 85, 2020
432020
Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
Y Shuang, Y Sutou, S Hatayama, S Shindo, YH Song, D Ando, J Koike
Applied Physics Letters 112 (18), 2018
292018
Cr-Triggered Local Structural Change in Cr2Ge2Te6 Phase Change Material
S Hatayama, Y Shuang, P Fons, Y Saito, AV Kolobov, K Kobayashi, ...
ACS applied materials & interfaces 11 (46), 43320-43329, 2019
272019
Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices
M Krbal, V Prokop, AA Kononov, JR Pereira, J Mistrik, AV Kolobov, ...
ACS Applied Nano Materials 4 (9), 8834-8844, 2021
242021
High-quality sputter-grown layered chalcogenide films for phase change memory applications and beyond
Y Saito, P Fons, AV Kolobov, KV Mitrofanov, K Makino, J Tominaga, ...
Journal of Physics D: Applied Physics 53 (28), 284002, 2020
232020
Electrical transport mechanism of the amorphous phase in Cr2Ge2Te6 phase change material
S Hatayama, Y Sutou, D Ando, J Koike, K Kobayashi
Journal of Physics D: Applied Physics 52 (10), 105103, 2019
202019
Crystallization mechanism and kinetics of Cr2Ge2Te6 phase change material
S Hatayama, Y Sutou, D Ando, J Koike
MRS Communications 8 (3), 1167-1172, 2018
152018
Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material
Y Saito, S Hatayama, Y Shuang, P Fons, AV Kolobov, Y Sutou
Scientific reports 11 (1), 4782, 2021
142021
Bidirectional selector utilizing hybrid diodes for PCRAM applications
Y Shuang, S Hatayama, J An, J Hong, D Ando, Y Song, Y Sutou
Scientific Reports 9 (1), 20209, 2019
132019
Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases
S Hatayama, Y Saito, K Makino, N Uchida, Y Shuang, S Mori, Y Sutou, ...
Journal of Materials Chemistry C 10 (29), 10627-10635, 2022
112022
Relation between density and optical contrasts upon crystallization in Cr2Ge2Te6 phase-change material: coexistence of a positive optical contrast and a negative density contrast
S Hatayama, D Ando, Y Sutou
Journal of Physics D: Applied Physics 52 (32), 325111, 2019
112019
Design strategy of phase change material properties for low-energy memory application
T Yamamoto, S Hatayama, Y Sutou
Materials & Design 216, 110560, 2022
102022
Low resistance-drift characteristics in Cr2Ge2Te6-based phase change memory devices with a high-resistance crystalline phase
S Hatayama, YH Song, Y Sutou
Materials Science in Semiconductor Processing 133, 105961, 2021
102021
The importance of contacts in Cu2GeTe3 phase change memory devices
S Shindo, Y Shuang, S Hatayama, Y Saito, P Fons, AV Kolobov, ...
Journal of Applied Physics 128 (16), 2020
102020
Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications
Y Saito, S Hatayama, Y Shuang, S Shindo, P Fons, AV Kolobov, ...
Applied Physics Express 12 (5), 051008, 2019
102019
Nitrogen doping-induced local structure change in a Cr 2 Ge 2 Te 6 inverse resistance phase-change material
Y Shuang, S Hatayama, H Tanimura, D Ando, T Ichitsubo, Y Sutou
Materials Advances 1 (7), 2426-2432, 2020
92020
Improved Ordering of Quasi-Two-Dimensional MoS2 via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS2+x
M Krbal, V Prokop, J Prikryl, JR Pereira, I Pis, AV Kolobov, PJ Fons, ...
Crystal Growth & Design 22 (5), 3072-3079, 2022
82022
Understanding the low resistivity of the amorphous phase of phase-change material: Experimental evidence for the key role of Cr clusters
S Hatayama, K Kobayashi, Y Saito, P Fons, Y Shuang, S Mori, ...
Physical Review Materials 5 (8), 085601, 2021
82021
Mixed-conduction mechanism of Cr2Ge2Te6 film enabling positive temperature dependence of electrical conductivity and seebeck coefficient
S Hatayama, T Yagi, Y Sutou
Results in Materials 8, 100155, 2020
82020
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