Ronny Kirste
Ronny Kirste
Research associate, NCSU
Verified email at
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The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ...
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 2012
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 2013
Polarity control in group-III nitrides beyond pragmatism
S Mohn, N Stolyarchuk, T Markurt, R Kirste, MP Hoffmann, R Collazo, ...
Physical Review Applied 5 (5), 054004, 2016
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 2013
Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals
C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ...
Journal of Applied Physics 107 (2), 2010
KOH based selective wet chemical etching of AlN, AlxGa1− xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
W Guo, R Kirste, I Bryan, Z Bryan, L Hussey, P Reddy, J Tweedie, ...
Applied Physics Letters 106 (8), 2015
Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers
L Huang, G Li, A Gurarslan, Y Yu, R Kirste, W Guo, J Zhao, R Collazo, ...
ACS nano 10 (8), 7493-7499, 2016
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ...
Applied Physics Letters 104 (20), 2014
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
F Kaess, S Mita, J Xie, P Reddy, A Klump, LH Hernandez-Balderrama, ...
Journal of Applied Physics 120 (10), 2016
Electronic biosensors based on III-nitride semiconductors
R Kirste, N Rohrbaugh, I Bryan, Z Bryan, R Collazo, A Ivanisevic
Annual Review of Analytical Chemistry 8 (1), 149-169, 2015
Polarity control and growth of lateral polarity structures in AlN
R Kirste, S Mita, L Hussey, MP Hoffmann, W Guo, I Bryan, Z Bryan, ...
Applied Physics Letters 102 (18), 2013
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ...
Applied Physics Letters 98 (6), 2011
Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition
MR Wagner, TP Bartel, R Kirste, A Hoffmann, J Sann, S Lautenschläger, ...
Physical Review B—Condensed Matter and Materials Physics 79 (3), 035307, 2009
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012
Point defect reduction in MOCVD (Al) GaN by chemical potential control and a comprehensive model of C incorporation in GaN
P Reddy, S Washiyama, F Kaess, R Kirste, S Mita, R Collazo, Z Sitar
Journal of Applied Physics 122 (24), 2017
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
P Reddy, I Bryan, Z Bryan, J Tweedie, S Washiyama, R Kirste, S Mita, ...
Applied Physics Letters 107 (9), 2015
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
W Guo, Z Bryan, J Xie, R Kirste, S Mita, I Bryan, L Hussey, M Bobea, ...
Journal of Applied Physics 115 (10), 2014
Thermal conductivity of single-crystalline AlN
R Rounds, B Sarkar, A Klump, C Hartmann, T Nagashima, R Kirste, ...
Applied Physics Express 11 (7), 071001, 2018
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