| Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ... Applied Physics Letters 108 (1), 2016 | 237 | 2016 |
| Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ... IEEE Transactions on Magnetics 51 (11), 1-7, 2015 | 176 | 2015 |
| SPICE macromodel of spin-torque-transfer-operated magnetic tunnel junctions JD Harms, F Ebrahimi, X Yao, JP Wang IEEE transactions on electron devices 57 (6), 1425-1430, 2010 | 129 | 2010 |
| Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory S Wang, H Lee, F Ebrahimi, PK Amiri, KL Wang, P Gupta IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016 | 114 | 2016 |
| Magnetic tunnel junction-based spintronic logic units operated by spin transfer torque X Yao, J Harms, A Lyle, F Ebrahimi, Y Zhang, JP Wang IEEE Transactions on Nanotechnology 11 (1), 120-126, 2011 | 90 | 2011 |
| Thermally stable voltage-controlled perpendicular magnetic anisotropy in Mo| CoFeB| MgO structures X Li, G Yu, H Wu, PV Ong, K Wong, Q Hu, F Ebrahimi, P Upadhyaya, ... Applied Physics Letters 107 (14), 2015 | 68 | 2015 |
| Write error rate and read disturbance in electric-field-controlled magnetic random-access memory C Grezes, H Lee, A Lee, S Wang, F Ebrahimi, X Li, K Wong, JA Katine, ... IEEE Magnetics Letters 8, 1-5, 2016 | 57 | 2016 |
| Design of high-throughput and low-power true random number generator utilizing perpendicularly magnetized voltage-controlled magnetic tunnel junction H Lee, F Ebrahimi, PK Amiri, KL Wang AIP Advances 7 (5), 2017 | 51 | 2017 |
| Voltage-controlled magnetic tunnel junctions for processing-in-memory implementation L Wang, W Kang, F Ebrahimi, X Li, Y Huang, C Zhao, KL Wang, W Zhao IEEE Electron Device Letters 39 (3), 440-443, 2018 | 40 | 2018 |
| Control of spin-wave damping in YIG using spin currents from topological insulators A Navabi, Y Liu, P Upadhyaya, K Murata, F Ebrahimi, G Yu, B Ma, Y Rao, ... Physical review applied 11 (3), 034046, 2019 | 35 | 2019 |
| Analysis and compact modeling of magnetic tunnel junctions utilizing voltage-controlled magnetic anisotropy H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang IEEE Transactions on Magnetics 54 (4), 1-9, 2018 | 32 | 2018 |
| Low-power, high-density spintronic programmable logic with voltage-gated spin Hall effect in magnetic tunnel junctions H Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Magnetics Letters 7, 1-5, 2016 | 31 | 2016 |
| In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions C Grezes, A Rojas Rozas, F Ebrahimi, JG Alzate, X Cai, JA Katine, ... AIP Advances 6 (7), 2016 | 30 | 2016 |
| Predictive materials design of magnetic random-access memory based on nanoscale atomic structure and element distribution X Li, T Sasaki, C Grezes, D Wu, K Wong, C Bi, PV Ong, F Ebrahimi, G Yu, ... Nano letters 19 (12), 8621-8629, 2019 | 23 | 2019 |
| A word line pulse circuit technique for reliable magnetoelectric random access memory H Lee, A Lee, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (7 …, 2017 | 21 | 2017 |
| Communication between magnetic tunnel junctions using spin-polarized current for logic applications A Lyle, X Yao, F Ebrahimi, J Harms, JP Wang IEEE transactions on magnetics 46 (6), 2216-2219, 2010 | 21 | 2010 |
| A spintronic voltage-controlled stochastic oscillator for event-driven random sampling H Lee, C Grezes, A Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Electron Device Letters 38 (2), 281-284, 2016 | 20 | 2016 |
| Analog to stochastic bit stream converter utilizing voltage-assisted spin Hall effect H Lee, A Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Electron Device Letters 38 (9), 1343-1346, 2017 | 19 | 2017 |
| Array-level analysis of magneto-electric random-access memory for high-performance embedded applications H Lee, A Lee, F Ebrahimi, PK Amiri, KL Wang IEEE Magnetics Letters 8, 1-5, 2017 | 14 | 2017 |
| Source line sensing in magneto-electric random-access memory to reduce read disturbance and improve sensing margin H Lee, C Grezes, S Wang, F Ebrahimi, P Gupta, PK Amiri, KL Wang IEEE Magnetics Letters 7, 1-5, 2016 | 14 | 2016 |
