Stephan Lany
Cited by
Cited by
Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides
S Lany, A Zunger
Physical Review Letters 98 (4), 045501, 2007
Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
S Lany, A Zunger
Physical Review B 78 (23), 235104, 2008
Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
S Lany, A Zunger
Physical Review B 72 (3), 035215, 2005
Origins of the p-type nature and cation deficiency in Cu 2 O and related materials
H Raebiger, S Lany, A Zunger
Physical Review B 76 (4), 045209, 2007
n-type doping of CuIn Se 2 and CuGa Se 2
C Persson, YJ Zhao, S Lany, A Zunger
Physical Review B 72 (3), 035211, 2005
Correcting density functional theory for accurate predictions of compound enthalpies of formation: Fitted elemental-phase reference energies
V Stevanović, S Lany, X Zhang, A Zunger
Physical Review B 85 (11), 115104, 2012
Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS
J Vidal, S Lany, M d’Avezac, A Zunger, A Zakutayev, J Francis, J Tate
Applied Physics Letters 100 (3), 032104, 2012
Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors
S Lany, A Zunger
Physical Review B 80 (8), 085202, 2009
Accurate prediction of defect properties in density functional supercell calculations
S Lany, A Zunger
Modelling and simulation in materials science and engineering 17 (8), 084002, 2009
Light- and bias-induced metastabilities in based solar cells caused by the vacancy complex
S Lany, A Zunger
Journal of Applied Physics 100 (11), 113725, 2006
Magnetism without magnetic ions: percolation, exchange, and formation energies of magnetism-promoting intrinsic defects in CaO
J Osorio-Guillén, S Lany, SV Barabash, A Zunger
Physical review letters 96 (10), 107203, 2006
Defect tolerant semiconductors for solar energy conversion
A Zakutayev, CM Caskey, AN Fioretti, DS Ginley, J Vidal, V Stevanovic, ...
The journal of physical chemistry letters 5 (7), 1117-1125, 2014
The electronic structure of chalcopyrites—bands, point defects and grain boundaries
S Siebentritt, M Igalson, C Persson, S Lany
Progress in Photovoltaics: Research and Applications 18 (6), 390-410, 2010
The 2019 materials by design roadmap
K Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ...
Journal of Physics D: Applied Physics 52 (1), 013001, 2018
Charge self-regulation upon changing the oxidation state of transition metals in insulators
H Raebiger, S Lany, A Zunger
Nature 453 (7196), 763-766, 2008
Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals
SJ Clark, J Robertson, S Lany, A Zunger
Physical Review B 81 (11), 115311, 2010
Origins of the doping asymmetry in oxides: Hole doping in NiO versus electron doping in ZnO
S Lany, J Osorio-Guillén, A Zunger
Physical Review B 75 (24), 241203, 2007
Assessing capability of semiconductors to split water using ionization potentials and electron affinities only
V Stevanović, S Lany, DS Ginley, W Tumas, A Zunger
Physical Chemistry Chemical Physics 16 (8), 3706-3714, 2014
A map of the inorganic ternary metal nitrides
W Sun, CJ Bartel, E Arca, SR Bauers, B Matthews, B Orvañanos, ...
Nature materials 18 (7), 732-739, 2019
The quest for dilute ferromagnetism in semiconductors: Guides and misguides by theory
A Zunger, S Lany, H Raebiger
Physics 3, 53, 2010
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Articles 1–20