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Christina DiMarino
Christina DiMarino
Assistant Professor, Center for Power Electronics Systems (CPES), Virginia Tech
Verified email at vt.edu
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Cited by
Year
Gate driver design for 1.7 kV SiC MOSFET module with Rogowski current sensor for shortcircuit protection
J Wang, Z Shen, C DiMarino, R Burgos, D Boroyevich
2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 516-523, 2016
1312016
High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors
CM DiMarino, R Burgos, B Dushan
IEEE Industrial Electronics Magazine 9 (3), 19-30, 2015
1032015
10-kV SiC MOSFET power module with reduced common-mode noise and electric field
CM DiMarino, B Mouawad, CM Johnson, D Boroyevich, R Burgos
IEEE Transactions on Power Electronics 35 (6), 6050-6060, 2019
1002019
High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs
C DiMarino, Z Chen, M Danilovic, D Boroyevich, R Burgos, P Mattavelli
2013 IEEE Energy Conversion Congress and Exposition, 3235-3242, 2013
852013
Medium-voltage impedance measurement unit for assessing the system stability of electric ships
M Jakšić, Z Shen, I Cvetković, D Boroyevich, R Burgos, C DiMarino, ...
IEEE Transactions on Energy Conversion 32 (2), 829-841, 2017
732017
Design and experimental validation of a wire-bond-less 10-kV SiC MOSFET power module
C DiMarino, B Mouawad, CM Johnson, M Wang, YS Tan, GQ Lu, ...
IEEE Journal of emerging and selected topics in power electronics 8 (1), 381-394, 2019
612019
10 kV, 120 a SiC MOSFET modules for a power electronics building block (PEBB)
C DiMarino, I Cvetkovic, Z Shen, R Burgos, D Boroyevich
2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 55-58, 2014
562014
Characterization and comparison of 1.2 kV SiC power semiconductor devices
C DiMarino, Z Chen, D Boroyevich, R Burgos, P Mattavelli
2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013
432013
Modular scalable medium-voltage impedance measurement unit using 10 kV SiC MOSFET PEBBs
I Cvetkovic, Z Shen, M Jaksic, C DiMarino, F Chen, D Boroyevich, ...
2015 IEEE Electric Ship Technologies Symposium (ESTS), 326-331, 2015
412015
Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter
S Mocevic, J Yu, B Fan, K Sun, Y Xu, J Stewart, Y Rong, H Song, ...
IEnergy 1 (1), 100-113, 2022
352022
A high-speed gate driver with PCB-embedded Rogowski switch-current sensor for a 10 kV, 240 A, SiC MOSFET module
J Wang, S Mocevic, Y Xu, C DiMarino, R Burgos, D Boroyevich
2018 IEEE Energy Conversion Congress and Exposition (ECCE), 5489-5494, 2018
352018
Characterization and prediction of the avalanche performance of 1.2 kV SiC MOSFETs
C DiMarino, B Hull
2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015
342015
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Y Qin, B Albano, J Spencer, JS Lundh, B Wang, C Buttay, M Tadjer, ...
Journal of Physics D: Applied Physics 56 (9), 093001, 2023
322023
Low thermal resistance (0.5 K/W) Ga₂O₃ Schottky rectifiers with double-side packaging
B Wang, M Xiao, J Knoll, C Buttay, K Sasaki, GQ Lu, C Dimarino, Y Zhang
IEEE Electron Device Letters 42 (8), 1132-1135, 2021
322021
Design of a novel, high-density, high-speed 10 kV SiC MOSFET module
C DiMarino, M Johnson, B Mouawad, J Li, D Boroyevich, R Burgos, ...
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 4003-4010, 2017
322017
A high-density, high-efficiency 1.2 kV SiC MOSFET module and gate drive circuit
C DiMarino, W Zhang, N Haryani, Q Wang, R Burgos, D Boroyevich
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016
312016
Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes
C Buttay, HY Wong, B Wang, M Xiao, C Dimarino, Y Zhang
Microelectronics Reliability 114, 113743, 2020
302020
Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system
B Mouawad, R Skuriat, J Li, CM Johnson, C DiMarino
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
302018
A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module
C DiMarino, J Wang, R Burgos, D Boroyevich
2017 IEEE Electric Ship Technologies Symposium (ESTS), 629-634, 2017
292017
A wire-bond-less 10 kV SiC MOSFET power module with reduced common-mode noise and electric field
C Dimarino, B Mouawad, K Li, Y Xu, M Johnson, D Boroyevich, R Burgos
PCIM Europe 2018; International Exhibition and Conference for Power …, 2018
252018
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