Armin Dadgar
Armin Dadgar
apl. Prof.
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Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 µm in thickness
A Dadgar, J Bläsing, A Diez, A Alam, M Heuken, A Krost
Japanese Journal of Applied Physics 39 (11B), L1183, 2000
GaN-based optoelectronics on silicon substrates
A Krost, A Dadgar
Materials Science and Engineering: B 93 (1-3), 77-84, 2002
Gallium nitride vertical power devices on foreign substrates: a review and outlook
Y Zhang, A Dadgar, T Palacios
Journal of Physics D: Applied Physics 51 (27), 273001, 2018
Template‐assisted large‐scale ordered arrays of ZnO pillars for optical and piezoelectric applications
HJ Fan, W Lee, R Hauschild, M Alexe, G Le Rhun, R Scholz, A Dadgar, ...
Small 2 (4), 561-568, 2006
Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ masking
A Dadgar, M Poschenrieder, J Bläsing, K Fehse, A Diez, A Krost
Applied Physics Letters 80 (20), 3670-3672, 2002
GaN‐based devices on Si
A Krost, A Dadgar
physica status solidi (a) 194 (2), 361-375, 2002
High Si and Ge n-type doping of GaN doping-Limits and impact on stress
S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ...
Applied Physics Letters 100 (12), 2012
MOVPE growth of GaN on Si (1 1 1) substrates
A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ...
Journal of Crystal Growth 248, 556-562, 2003
Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach
HJ Fan, W Lee, R Scholz, A Dadgar, A Krost, K Nielsch, M Zacharias
Nanotechnology 16 (6), 913, 2005
GaN‐based epitaxy on silicon: stress measurements
A Krost, A Dadgar, G Strassburger, R Clos
physica status solidi (a) 200 (1), 26-35, 2003
Recording of cell action potentials with AlGaN∕ GaN field-effect transistors
G Steinhoff, B Baur, G Wrobel, S Ingebrandt, A Offenhäusser, A Dadgar, ...
Applied Physics Letters 86 (3), 2005
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to
M Feneberg, S Osterburg, K Lange, C Lidig, B Garke, R Goldhahn, ...
Physical Review B 90 (7), 075203, 2014
Atomic arrangement at the AlN/Si (111) interface
R Liu, FA Ponce, A Dadgar, A Krost
Applied Physics Letters 83 (5), 860-862, 2003
Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction
A Dadgar, F Schulze, M Wienecke, A Gadanecz, J Bläsing, P Veit, ...
New Journal of Physics 9 (10), 389, 2007
High-sheet-charge–carrier-density AlInN∕ GaN field-effect transistors on Si (111)
A Dadgar, F Schulze, J Bläsing, A Diez, A Krost, M Neuburger, E Kohn, ...
Applied physics letters 85 (22), 5400-5402, 2004
The origin of stress reduction by low-temperature AlN interlayers
J Bläsing, A Reiher, A Dadgar, A Diez, A Krost
Applied physics letters 81 (15), 2722-2724, 2002
Growth of blue GaN LED structures on 150-mm Si (1 1 1)
A Dadgar, C Hums, A Diez, J Bläsing, A Krost
Journal of Crystal Growth 297 (2), 279-282, 2006
Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
HJ Fan, B Fuhrmann, R Scholz, F Syrowatka, A Dadgar, A Krost, ...
Journal of Crystal Growth 287 (1), 34-38, 2006
Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range
C Hums, J Bläsing, A Dadgar, A Diez, T Hempel, J Christen, A Krost, ...
Applied Physics Letters 90 (2), 2007
Efficient stress relief in GaN heteroepitaxy on Si (1 1 1) using low-temperature AlN interlayers
A Reiher, J Bläsing, A Dadgar, A Diez, A Krost
Journal of crystal growth 248, 563-567, 2003
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