| Preparation and characterization of MgF2 thin film by a trifluoroacetic acid method S Fujihara, M Tada, T Kimura Thin Solid Films 304 (1-2), 252-255, 1997 | 107 | 1997 |
| Polymer solid-electrolyte switch embedded on CMOS for nonvolatile crossbar switch M Tada, K Okamoto, T Sakamoto, M Miyamura, N Banno, H Hada IEEE Transactions on Electron Devices 58 (12), 4398-4406, 2011 | 80 | 2011 |
| Sol-gel processing and characterization of alkaline earth and rare-earth fluoride thin films M Tada, S Fujihara, T Kimura Journal of materials research 14 (4), 1610-1616, 1999 | 80 | 1999 |
| Controlling factors for the conversion of trifluoroacetate sols into thin metal fluoride coatings S Fujihara, M Tada, T Kimura Journal of Sol-Gel Science and Technology 19, 311-314, 2000 | 72 | 2000 |
| Semiconductor device and method of manufacturing the same M Tada, T Sakamoto, H Hada, N Banno US Patent 9,406,877, 2016 | 62 | 2016 |
| Semiconductor device and method of manufacturing the same M Tada, T Sakamoto, H Hada, N Banno US Patent 9,406,877, 2016 | 62 | 2016 |
| Programmable cell array using rewritable solid-electrolyte switch integrated in 90nm CMOS M Miyamura, S Nakaya, M Tada, T Sakamoto, K Okamoto, N Banno, ... 2011 IEEE International Solid-State Circuits Conference, 228-229, 2011 | 62 | 2011 |
| Low temperature (≤ 380° C) and high performance Ge CMOS technology with novel source/drain by metal-induced dopants activation and high-k/metal gate stack for monolithic 3D … JH Park, M Tada, D Kuzum, P Kapur, HY Yu, KC Saraswat 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 61 | 2008 |
| Sol–gel synthesis of inorganic complex fluorides using trifluoroacetic acid S Fujihara, S Ono, Y Kishiki, M Tada, T Kimura Journal of Fluorine Chemistry 105 (1), 65-70, 2000 | 56 | 2000 |
| High performance germanium N+∕ P and P+∕ N junction diodes formed at low Temperature (⩽ 380° C) using metal-induced dopant activation JH Park, D Kuzum, M Tada, KC Saraswat Applied Physics Letters 93 (19), 2008 | 48 | 2008 |
| First demonstration of logic mapping on nonvolatile programmable cell using complementary atom switch M Miyamura, M Tada, T Sakamoto, N Banno, K Okamoto, N Iguchi, ... 2012 International Electron Devices Meeting, 10.6. 1-10.6. 4, 2012 | 44 | 2012 |
| Nonvolatile Crossbar Switch UsingSolid Electrolyte M Tada, T Sakamoto, N Banno, M Aono, H Hada, N Kasai IEEE transactions on electron devices 57 (8), 1987-1995, 2010 | 43 | 2010 |
| Chemical structure effects of ring-type siloxane precursors on properties of plasma-polymerized porous SiOCH films M Tada, H Yamamoto, F Ito, T Takeuchi, N Furutake, Y Hayashi Journal of the Electrochemical Society 154 (7), D354, 2007 | 42 | 2007 |
| Semiconductor device and manufacturing method for semiconductor device M Tada, M Miyamura, H Hada US Patent 9,029,825, 2015 | 40 | 2015 |
| Semiconductor device and method for manufacturing the same M Tada, H Hada US Patent 8,536,629, 2013 | 38 | 2013 |
| Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration JH Park, M Tada, WS Jung, HSP Wong, KC Saraswat Journal of Applied Physics 106 (7), 2009 | 36 | 2009 |
| Self-nucleation free and dimension dependent metal-induced lateral crystallization of amorphous germanium for single crystalline germanium growth on insulating substrate JH Park, M Tada, P Kapur, H Peng, KC Saraswat Journal of Applied Physics 104 (6), 2008 | 36 | 2008 |
| Semiconductor device with variable resistance element and method for manufacturing the same Y Sakotsubo, M Terai, M Tada, Y Yabe, Y Saito US Patent 8,766,233, 2014 | 35 | 2014 |
| Improved off-state reliability of nonvolatile resistive switch with low programming voltage M Tada, T Sakamoto, M Miyamura, N Banno, K Okamoto, N Iguchi, ... IEEE transactions on electron devices 59 (9), 2357-2362, 2012 | 34 | 2012 |
| Low-temperature, low-pressure chemical vapor deposition and solid phase crystallization of silicon–germanium films M Tada, JH Park, JR Jain, KC Saraswat Journal of the Electrochemical Society 156 (1), D23, 2008 | 34 | 2008 |
Krishna SaraswatProfessor of Electrical Engineering, Stanford UniversityVerified email at stanford.edu
