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Cited by
Year
Error patterns in MLC NAND flash memory: Measurement, characterization, and analysis
Y Cai, EF Haratsch, O Mutlu, K Mai
2012 Design, Automation & Test in Europe Conference & Exhibition (DATE), 521-526, 2012
4722012
Threshold voltage distribution in MLC NAND flash memory: Characterization, analysis, and modeling
Y Cai, EF Haratsch, O Mutlu, K Mai
2013 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2013
3782013
Error characterization, mitigation, and recovery in flash-memory-based solid-state drives
Y Cai, S Ghose, EF Haratsch, Y Luo, O Mutlu
Proceedings of the IEEE 105 (9), 1666-1704, 2017
3482017
Data retention in MLC NAND flash memory: Characterization, optimization, and recovery
Y Cai, Y Luo, EF Haratsch, K Mai, O Mutlu
2015 IEEE 21st International Symposium on High Performance Computer …, 2015
3232015
Flash correct-and-refresh: Retention-aware error management for increased flash memory lifetime
Y Cai, G Yalcin, O Mutlu, EF Haratsch, A Cristal, OS Unsal, K Mai
2012 IEEE 30th International Conference on Computer Design (ICCD), 94-101, 2012
2942012
Program interference in MLC NAND flash memory: Characterization, modeling, and mitigation
Y Cai, O Mutlu, EF Haratsch, K Mai
2013 IEEE 31st International Conference on Computer Design (ICCD), 123-130, 2013
2532013
Read disturb errors in MLC NAND flash memory: Characterization, mitigation, and recovery
Y Cai, Y Luo, S Ghose, O Mutlu
2015 45th Annual IEEE/IFIP International Conference on Dependable Systems …, 2015
2292015
Vulnerabilities in MLC NAND flash memory programming: Experimental analysis, exploits, and mitigation techniques
Y Cai, S Ghose, Y Luo, K Mai, O Mutlu, EF Haratsch
2017 IEEE International Symposium on High Performance Computer Architecture …, 2017
1522017
WARM: Improving NAND flash memory lifetime with write-hotness aware retention management
Y Luo, Y Cai, S Ghose, J Choi, O Mutlu
2015 31st Symposium on Mass Storage Systems and Technologies (MSST), 1-14, 2015
1432015
Improving 3D NAND flash memory lifetime by tolerating early retention loss and process variation
Y Luo, S Ghose, Y Cai, EF Haratsch, O Mutlu
Proceedings of the ACM on Measurement and Analysis of Computing Systems 2 (3 …, 2018
1422018
HeatWatch: Improving 3D NAND flash memory device reliability by exploiting self-recovery and temperature awareness
Y Luo, S Ghose, Y Cai, EF Haratsch, O Mutlu
2018 IEEE International Symposium on High Performance Computer Architecture …, 2018
1312018
Neighbor-cell assisted error correction for MLC NAND flash memories
Y Cai, G Yalcin, O Mutlu, EF Haratsch, O Unsal, A Cristal, K Mai
ACM SIGMETRICS Performance Evaluation Review 42 (1), 491-504, 2014
1042014
Preventing programming errors from occurring when programming flash memory cells
Y Cai, Y Wu, Z Chen, E Haratsch
US Patent 9,417,960, 2016
972016
ERROR ANALYSIS AND RETENTION-AWARE ERROR MANAGEMENT FOR NAND FLASH MEMORY.
Y Cai, G Yalcin, O Mutlu, EF Haratsch, A Crista, OS Unsal, K Mai
Intel Technology Journal 17 (1), 2013
952013
Enabling accurate and practical online flash channel modeling for modern MLC NAND flash memory
Y Luo, S Ghose, Y Cai, EF Haratsch, O Mutlu
IEEE Journal on Selected Areas in Communications 34 (9), 2294-2311, 2016
832016
Improving the reliability of chip-off forensic analysis of NAND flash memory devices
A Fukami, S Ghose, Y Luo, Y Cai, O Mutlu
Digital Investigation 20, S1-S11, 2017
692017
Mitigation of write errors in multi-level cell flash memory through adaptive error correction code decoding
AHS Alhussien, I Djurdjevic, Y Cai, EF Haratsch, Y Li, ET Cohen
US Patent 9,319,073, 2016
602016
Errors in flash-memory-based solid-state drives: Analysis, mitigation, and recovery
Y Cai, S Ghose, EF Haratsch, Y Luo, O Mutlu
arXiv preprint arXiv:1711.11427, 2017
582017
FPGA-based solid-state drive prototyping platform
Y Cai, EF Haratsch, M McCartney, K Mai
2011 IEEE 19th Annual International Symposium on Field-Programmable Custom …, 2011
512011
Error correction code (ECC) selection using probability density functions of error correction capability in storage controllers with multiple error correction codes
Y Cai, Y Wu, EF Haratsch
US Patent 9,419,655, 2016
412016
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