Etienne Nowak
Etienne Nowak
Verified email at
Cited by
Cited by
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration
A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Fundamental variability limits of filament-based RRAM
A Grossi, E Nowak, C Zambelli, C Pellissier, S Bernasconi, G Cibrario, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2016
In-memory and error-immune differential RRAM implementation of binarized deep neural networks
M Bocquet, T Hirztlin, JO Klein, E Nowak, E Vianello, JM Portal, ...
2018 IEEE International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2018
Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2019
Intrinsic fluctuations in vertical NAND flash memories
E Nowak, JH Kim, HY Kwon, YG Kim, JS Sim, SH Lim, DS Kim, KH Lee, ...
2012 Symposium on VLSI Technology (VLSIT), 21-22, 2012
Experimental investigation of 4-kb RRAM arrays programming conditions suitable for TCAM
A Grossi, E Vianello, C Zambelli, P Royer, JP Noel, B Giraud, L Perniola, ...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 26 (12 …, 2018
Digital biologically plausible implementation of binarized neural networks with differential hafnium oxide resistive memory arrays
T Hirtzlin, M Bocquet, B Penkovsky, JO Klein, E Nowak, E Vianello, ...
Frontiers in neuroscience 13, 1383, 2020
Narrow Heater Bottom Electrode‐Based Phase Change Memory as a Bidirectional Artificial Synapse
S La Barbera, DRB Ly, G Navarro, N Castellani, O Cueto, G Bourgeois, ...
Advanced Electronic Materials 4 (9), 1800223, 2018
Resistive RAM endurance: Array-level characterization and correction techniques targeting deep learning applications
A Grossi, E Vianello, MM Sabry, M Barlas, L Grenouillet, J Coignus, ...
IEEE Transactions on Electron Devices 66 (3), 1281-1288, 2019
Outstanding bit error tolerance of resistive ram-based binarized neural networks
T Hirtzlin, M Bocquet, JO Klein, E Nowak, E Vianello, JM Portal, ...
2019 IEEE International Conference on Artificial Intelligence Circuits and …, 2019
Liquid silicon: A nonvolatile fully programmable processing-in-memory processor with monolithically integrated ReRAM
Y Zha, E Nowak, J Li
IEEE Journal of Solid-State Circuits 55 (4), 908-919, 2020
Hybrid‐RRAM toward next generation of nonvolatile memory: coupling of oxygen vacancies and metal ions
G Sassine, C Nail, P Blaise, B Sklenard, M Bernard, R Gassilloud, A Marty, ...
Advanced Electronic Materials 5 (2), 1800658, 2019
High-density 3D monolithically integrated multiple 1T1R multi-level-cell for neural networks
E Esmanhotto, L Brunet, N Castellani, D Bonnet, T Dalgaty, L Grenouillet, ...
2020 IEEE International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2020
Advances in emerging memory technologies: From data storage to artificial intelligence
G Molas, E Nowak
Applied Sciences 11 (23), 11254, 2021
Nanosecond laser anneal (NLA) for Si-implanted HfO2 ferroelectric memories integrated in back-end of line (BEOL)
L Grenouillet, T Francois, J Coignus, S Kerdiles, N Vaxelaire, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications
G Sassine, C Nail, L Tillie, DA Robayo, A Levisse, C Cagli, KE Hajjam, ...
2018 IEEE International Reliability Physics Symposium (IRPS), P-MY. 2-1-P-MY …, 2018
Experimental demonstration of short and long term synaptic plasticity using OxRAM multi k-bit arrays for reliable detection in highly noisy input data
T Werner, E Vianello, O Bichler, A Grossi, E Nowak, JF Nodin, B Yvert, ...
2016 IEEE International Electron Devices Meeting (IEDM), 16.6. 1-16.6. 4, 2016
Resistive memories (RRAM) variability: Challenges and solutions
G Molas, G Sassine, C Nail, DA Robayo, JF Nodin, C Cagli, J Coignus, ...
ECS Transactions 86 (3), 35, 2018
Role of synaptic variability in resistive memory-based spiking neural networks with unsupervised learning
DRB Ly, A Grossi, C Fenouillet-Beranger, E Nowak, D Querlioz, ...
Journal of Physics D: Applied Physics 51 (44), 444002, 2018
In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors
M Alayan, E Vianello, G Navarro, C Carabasse, S La Barbera, A Verdy, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.3. 1-2.3. 4, 2017
The system can't perform the operation now. Try again later.
Articles 1–20