Micovic M.
Title
Cited by
Cited by
Year
Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications
K Shinohara, DC Regan, Y Tang, AL Corrion, DF Brown, JC Wong, ...
IEEE Transactions on Electron Devices 60 (10), 2982-2996, 2013
3532013
Highly efficient light-emitting diodes with microcavities
EF Schubert, NEJ Hunt, M Micovic, RJ Malik, DL Sivco, AY Cho, GJ Zydzik
Science 265 (5174), 943-945, 1994
3131994
Ultrahigh-Speed GaN High-Electron-Mobility Transistors Withof 454/444 GHz
Y Tang, K Shinohara, D Regan, A Corrion, D Brown, J Wong, A Schmitz, ...
IEEE Electron Device Letters 36 (6), 549-551, 2015
1982015
Temperature and modulation characteristics of resonant-cavity light-emitting diodes
EF Schubert, NEJ Hunt, RJ Malik, M Micovic, DL Miller
Journal of Lightwave Technology 14 (7), 1721-1729, 1996
1841996
Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications
JS Moon, S Wu, D Wong, I Milosavljevic, A Conway, P Hashimoto, M Hu, ...
IEEE Electron Device Letters 26 (6), 348-350, 2005
1442005
Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
L Sorba, G Bratina, G Ceccone, A Antonini, JF Walker, M Micovic, ...
Physical Review B 43 (3), 2450, 1991
1381991
GaN/AlGaN high electron mobility transistors with f/sub/spl tau//of 110 GHz
M Micovic, NX Nguyen, P Janke, WS Wong, P Hashimoto, LM McCray, ...
Electronics Letters 36 (4), 358-359, 2000
1372000
GaN HFET for W-band power applications
M Micovic, A Kurdoghlian, P Hashimoto, M Hu, M Antcliffe, PJ Willadsen, ...
2006 International Electron Devices Meeting, 1-3, 2006
1302006
220GHz fTand 400GHz fmaxin 40-nm GaN DH-HEMTs with re-grown ohmic
K Shinohara, A Corrion, D Regan, I Milosavljevic, D Brown, S Burnham, ...
2010 International Electron Devices Meeting, 30.1. 1-30.1. 4, 2010
1292010
GaN double heterojunction field effect transistor for microwave and millimeterwave power applications
M Micovic, P Hashimoto, M Hu, I Milosavljevic, J Duvall, PJ Willadsen, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
1282004
92–96 GHz GaN power amplifiers
M Micovic, A Kurdoghlian, A Margomenos, DF Brown, K Shinohara, ...
2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012
1272012
High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
NX Nguyen, M Micovic, WS Wong, P Hashimoto, LM McCray, P Janke, ...
Electronics Letters 36 (5), 468-469, 2000
1222000
Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency
K Shinohara, D Regan, A Corrion, D Brown, S Burnham, PJ Willadsen, ...
2011 International Electron Devices Meeting, 19.1. 1-19.1. 4, 2011
1212011
High power-low noise microwave GaN heterojunction field effect transistor
M Micovic, M Antcliffe, T Hussain, P Hashimoto
US Patent 7,470,941, 2008
1052008
Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG
K Shinohara, D Regan, A Corrion, D Brown, Y Tang, J Wong, G Candia, ...
2012 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2012
982012
Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
C Nguyen, JS Moon, W Wong, M Micovic, P Hashimoto
US Patent App. 10/214,422, 2004
962004
55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via GaN Source Contact Ledge
JS Moon, D Wong, M Hu, P Hashimoto, M Antcliffe, C McGuire, M Micovic, ...
IEEE Electron Device Letters 29 (8), 834-837, 2008
952008
GaN/AlGaN HEMTs operating at 20 GHz with continuous-wave power density> 6 W/mm
JS Moon, M Micovic, P Janke, P Hashimoto, WS Wong, RD Widman, ...
Electronics Letters 37 (8), 528-530, 2001
932001
AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy
M Micovic, A Kurdoghlian, P Janke, P Hashimoto, DWS Wong, JS Moon, ...
IEEE transactions on Electron Devices 48 (3), 591-596, 2001
932001
W-band, 5W solid-state power amplifier/combiner
J Schellenberg, E Watkins, M Micovic, B Kim, K Han
2010 IEEE MTT-S International Microwave Symposium, 240-243, 2010
922010
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