|All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration|
M Sivan, Y Li, H Veluri, Y Zhao, B Tang, X Wang, E Zamburg, JF Leong, ...
Nature communications 10 (1), 1-12, 2019
|A flexible InGaAs nanomembrane PhotoFET with tunable responsivities in near-and short-wave IR region for lightweight imaging applications|
Y Li, A Alian, M Sivan, L Huang, KW Ang, D Lin, D Mocuta, N Collaert, ...
APL Materials 7 (3), 031503, 2019
|Aerosol Jet Printed WSe2 Crossbar Architecture Device on Kapton With Dual Functionality as Resistive Memory and Photosensor for Flexible System Integration|
Y Li, X Feng, M Sivan, JF Leong, B Tang, X Wang, JN Tey, J Wei, KW Ang, ...
IEEE Sensors Journal 20 (9), 4653-4659, 2020
|2-kbit Array of 3-D Monolithically-stacked IGZO FETs with Low SS-64mV/dec, Ultra-low-leakage, Competitive μ-57 cm2/V-s Performance and Novel nMOS-Only …|
U Chand, Z Fang, C Chun-Kuei, Y Luo, H Veluri, M Sivan, LJ Feng, ...
2021 Symposium on VLSI Technology, 1-2, 2021
|Aerosol Jet Printed WSe2 Based RRAM on Kapton Suitable for Flexible Monolithic Memory Integration|
Y Li, M Sivan, JX Niu, H Veluri, E Zamburg, J Leong, U Chand, S Samanta, ...
2019 IEEE International Conference on Flexible and Printable Sensors and …, 2019
|Highly scaled strained silicon-on-insulator technology for the 5G era: Impact of geometry and annealing on strain retention and device performance of nMOSFETs|
EYJ Kong, S Yadav, D Lei, Y Kang, M Sivan, Y Li, BY Nguyen, ...
IEEE Transactions on Electron Devices 66 (5), 2068-2074, 2019
|Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor|
SH Tsai, Z Fang, X Wang, U Chand, CK Chen, S Hooda, M Sivan, J Pan, ...
ACS Applied Electronic Materials 4 (4), 1642-1650, 2022
|Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing|
B Tang, H Veluri, Y Li, ZG Yu, M Waqar, JF Leong, M Sivan, E Zamburg, ...
Nature Communications 13 (1), 1-9, 2022
|Design of Artificial Spiking Neuron with SiO2 Memristive Synapse to Demonstrate Neuron-Level Spike Timing Dependent Plasticity|
JX Niu, H Veluri, Y Li, U Chand, JF Leong, E Zamburg, M Sivan, ...
2019 International Conference on IC Design and Technology (ICICDT), 1-3, 2019
|Hole-Injection at WO3/WSe2 Interface Using a Plasma Oxidation Process for Hole Mobility Enhancement and SBH reduction in p-type 2-D WSe2 Nanosheet FET|
M Sivan, Y Li, Y Zhao, AVY Thean
IEEE Semiconductor Interface Specialists Conference (SISC), 2018, 2018