IKHTIAR
IKHTIAR
Samsung Semiconductor Inc. (Samsung DSA)
Verified email at samsung.com
Title
Cited by
Cited by
Year
Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer
KH S. Kasai, Y. K. Takahashi, P. -H. Cheng, Ikhtiar, T. Furubayashi, K ...
Applied Physics Letters 109 (3), 032409, 2016
312016
Magneto-transport and microstructure of Co2Fe(Ga0.5Ge0.5)/Cu lateral spin valves prepared by top-down microfabrication process
Ikhtiar, S Kasai, A Itoh, YK Takahashi, T Ohkubo, S Mitani, K Hono
Journal of Applied Physics 115 (17), 173912, 2014
292014
Temperature dependence of magneto-transport properties in Co2Fe(Ga0.5Ge0.5)/Cu lateral spin valves
Ikhtiar, S Kasai, YK Takahashi, T Furubayashi, S Mitani, K Hono
Applied Physics Letters 108 (6), 062401, 2016
72016
Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4(001) based barriers
Ikhtiar, H Sukegawa, X Xu, M Belmoubarik, H Lee, S Kasai, K Hono
Applied Physics Letters 112 (2), 022408, 2018
62018
Magnetic tunnel junctions with a rock-salt-type Mg1−xTixO barrier for low resistance area product
TFKH Ikhtiar, S. Kasai, P.-H. Cheng, T. Ohkubo, Y. K. Takahashi
Applied Physics Letters 108 (24), 242416, 2016
5*2016
Interfacial perpendicular magnetic anisotropy and electric field effect in Ta/CoFeB/Mg1−xTixO heterostructures
Ikhtiar, K Mukaiyama, S Kasai, K Hono
Applied Physics Letters 111 (20), 202407, 2017
32017
Hybrid oxide/metal cap layer for boron-free free layer
Ikhtiar, X Tang, M Krounbi
US Patent App. 16/194,248, 2020
2020
Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction
Hiroaki Sukegawa, Ikhtiar, Shinya Kasai, Kazuhiro Hono, Xu Xiandong
US Patent App. 16/605,418, 2020
2020
Method and system for providing magnetic junctions utilizing metal oxide layer (s)
DK Lee, MT Krounbi, X Tang, G Feng, Ikhtiar
US Patent 10,553,642, 2020
2020
Magneto-resistance element in which i-iii-vi2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin …
S Kasai, Y Takahashi, P Cheng, Ikhtiar, S Mitani, T Ohkubo, K Hono
US Patent App. 16/311,367, 2019
2019
Method and system for providing a boron-free magnetic layer in perpendicular magnetic junctions
Ikhtiar, X Tang, MT Krounbi
US Patent 10,283,701, 2019
2019
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