Eugene Kong
Eugene Kong
Verified email at nus.edu.sg
Title
Cited by
Cited by
Year
Towards conformal damage-free doping with abrupt ultrashallow junction: Formation of Si monolayers and laser anneal as a novel doping technique for InGaAs nMOSFETs
EYJ Kong, P Guo, X Gong, B Liu, YC Yeo
IEEE Transactions on Electron Devices 61 (4), 1039-1046, 2014
342014
Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS
X Gong, G Han, B Liu, L Wang, W Wang, Y Yang, EYJ Kong, S Su, C Xue, ...
IEEE transactions on electron devices 60 (5), 1640-1648, 2013
292013
Towards high performance Ge1−xSnxand In0.7Ga0.3As CMOS: A novel common gate stack featuring sub-400 °C Si2H6passivation, single TaN metal gate …
X Gong, S Su, B Liu, L Wang, W Wang, Y Yang, E Kong, B Cheng, G Han, ...
2012 Symposium on VLSI Technology (VLSIT), 99-100, 2012
292012
Crystal structure and epitaxial relationship of Ni4InGaAs2 films formed on InGaAs by annealing
Ivana, Y Lim Foo, X Zhang, Q Zhou, J Pan, E Kong, MH Samuel Owen, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
202013
Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs
L Wang, G Han, S Su, Q Zhou, Y Yang, P Guo, W Wang, Y Tong, PSY Lim, ...
Electrochemical and Solid State Letters 15 (6), H179, 2012
192012
Contact-resistance reduction for strained n-FinFETs with silicon–carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation
SM Koh, EYJ Kong, B Liu, CM Ng, GS Samudra, YC Yeo
IEEE transactions on electron devices 58 (11), 3852-3862, 2011
182011
Investigation of Pd–InGaAs for the formation of self-aligned source/drain contacts in InGaAs metal–oxide–semiconductor field-effect transistors
EYJ Kong, X Zhang, Q Zhou, J Pan, Z Zhang, YC Yeo
Solid-state electronics 85, 36-42, 2013
132013
Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
B Liu, C Zhan, Y Yang, R Cheng, P Guo, Q Zhou, EYJ Kong, N Daval, ...
IEEE transactions on electron devices 60 (7), 2135-2141, 2013
122013
Junctionless Π-gate transistor with indium gallium arsenide channel
HX Guo, X Zhang, Z Zhu, EYJ Kong, YC Yeo
Electronics letters 49 (6), 402-404, 2013
112013
Nanocrystal-engineered thin CuO film photocatalyst for visible-light-driven photocatalytic degradation of organic pollutant in aqueous solution
R Katal, S Masudy-panah, EYJ Kong, ND Khiavi, MHDA Farahani, ...
Catalysis Today 340, 236-244, 2020
82020
Ultra-thin-body In0. 7Ga0. 3As-on-nothing N-MOSFET with Pd-InGaAs source/drain contacts enabled by a new self-aligned cavity formation technology
X Gong, Z Zhu, E Kong, R Cheng, S Subramanian, KH Goh, YC Yeo
International Symposium on VLSI Technology, Systems, and Applications, 2012
62012
Extraction of polarization-dependent damping constant for dynamic evaluation of ferroelectric films and devices
Y Li, K Han, Y Kang, EYJ Kong, X Gong
IEEE Electron Device Letters 39 (8), 1211-1214, 2018
52018
Novel technique comprising silane treatment and laser anneal for abrupt ultra-shallow junction formation for InGaAs n-MOSFETs
E Kong, X Gong, P Guo, B Liu, YC Yeo
2013 International Symposium on VLSI Technology, Systems and Application …, 2013
52013
Fabrication and negative bias temperature instability (NBTI) study on Ge0. 97Sn0. 03 p-MOSFETs with Si2H6 passivation and HfO2 high-k and TaN metal gate
X Gong, S Su, B Liu, L Wang, W Wang, Y Yang, R Cheng, E Kong, ...
ECS Transactions 50 (9), 949, 2013
52013
CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In0. 53Ga0. 47As n-MOSFETs
EYJ Kong, S Subramanian, Q Zhou, J Pan, YC Yeo
Solid-state electronics 78, 62-67, 2012
52012
A novel floating body cell memory with a laterally engineered bandgap using a Si-Si: C heterostructure
SJ Choi, DI Moon, Y Ding, EYJ Kong, YC Yeo, YK Choi
2010 International Electron Devices Meeting, 22.4. 1-22.4. 4, 2010
52010
GeSn p-FinFETs with Sub-10 nm Fin Width Realized on a 200 mm GeSnOI Substrate: Lowest SS of 63 mV/decade, Highest Gm,intof 900 µS/µm, and High-Field µeffof 275 cm …
D Lei, K Han, KH Lee, YC Huang, W Wang, S Yadav, A Kumar, Y Wu, ...
2018 IEEE Symposium on VLSI Technology, 197-198, 2018
42018
P2S5/(NH4)2Sx-Based Sulfur Monolayer Doping for Source/Drain Extensions in n-Channel InGaAs FETs
S Subramanian, EYJ Kong, D Li, S Wicaksono, SF Yoon, YC Yeo
IEEE Transactions on Electron Devices 61 (8), 2767-2773, 2014
42014
Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal–Oxide-Semiconductor Field-Effect Transistors: A Simulation Study
EYJ Kong, YC Yeo
IEEE Transactions on Electron Devices 61 (3), 734-741, 2014
42014
Ge/Ni–InGaAs Solid-State Reaction for Contact Resistance Reduction on n+ In0. 53Ga0. 47As
HX Guo, EYJ Kong, X Zhang, YC Yeo
Japanese Journal of Applied Physics 51 (2S), 02BF06, 2012
42012
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Articles 1–20