| Atomic layer deposition-developed two-dimensional α-MoO3 windows excellent hydrogen peroxide electrochemical sensing capabilities Z Wei, Z Hai, MK Akbari, D Qi, K Xing, Q Zhao, F Verpoort, J Hu, L Hyde, ... Sensors and Actuators B: Chemical 262, 334-344, 2018 | 59 | 2018 |
| MoO3 induces p-type surface conductivity by surface transfer doping in diamond K Xing, Y Xiang, M Jiang, DL Creedon, G Akhgar, SA Yianni, H Xiao, ... Applied Surface Science 509, 144890, 2020 | 38 | 2020 |
| Periodic nanostructures: preparation, properties and applications H Yin, K Xing, Y Zhang, DMAS Dissanayake, Z Lu, H Zhao, Z Zeng, ... Chemical Society Reviews 50, 6423, 2021 | 36 | 2021 |
| A DFT study of the surface charge transfer doping of diamond by chromium trioxide Y Xiang, M Jiang, H Xiao, K Xing, X Peng, S Zhang, DC Qi Applied Surface Science 496, 143604, 2019 | 30 | 2019 |
| Ultrasensitive NO2 Gas Sensors Based on Layered α‐MoO3 Nanoribbons W Li, K Xing, P Liu, C Chuang, YR Lu, TS Chan, T Tesfamichael, N Motta, ... Advanced Materials Technologies, 2100579, 2021 | 28 | 2021 |
| Ultrasonic spray pyrolysis of antimony‐doped tin oxide transparent conductive coatings J Kim, BJ Murdoch, JG Partridge, K Xing, DC Qi, J Lipton‐Duffin, ... Advanced Materials Interfaces 7 (18), 2000655, 2020 | 26 | 2020 |
| Precise Layer-Dependent Electronic Structure of MBE-Grown PtSe L Zhang, T Yang, MF Sahdan, W Xu, K Xing, YP Feng, W Zhang, Z Wang, ... Advanced Electronic Materials 2100559, 1-7, 2021 | 20 | 2021 |
| Palladium forms Ohmic contact on hydrogen-terminated diamond down to 4 K K Xing, A Tsai, S Rubanov, DL Creedon, SA Yianni, L Zhang, WC Hao, ... Applied Physics Letters 116 (11), 2020 | 20 | 2020 |
| High-electron-affinity oxide V2O5 enhances surface transfer doping on hydrogen-terminated diamond K Xing, S Zhang, A Tsai, H Xiao, DL Creedon, SA Yianni, JC McCallum, ... Diamond and Related Materials 108, 107865, 2020 | 15 | 2020 |
| Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond K Xing, DL Creedon, SA Yianni, G Akhgar, L Zhang, L Ley, JC McCallum, ... Carbon 164, 244-250, 2020 | 14 | 2020 |
| Highly Sensitive NO2 Gas Sensors Based on MoS2@MoO3 Magnetic Heterostructure W Li, M Shahbazi, K Xing, T Tesfamichael, N Motta, DC Qi Nanomaterials 12 (8), 1303, 2022 | 13 | 2022 |
| Large-sized α-MoO3 layered single crystals for superior NO2 gas sensing W Li, Q Ou, X Wang, K Xing, T Tesfamichael, N Motta, DC Qi Applied Surface Science 586, 152793, 2022 | 13 | 2022 |
| Bi-stable electronic states of cobalt phthalocyanine molecules on two-dimensional vanadium diselenide L Zhang, T Yang, W Zhang, D Qi, X He, K Xing, PKJ Wong, YP Feng, ... Applied Materials Today 18, 100535, 2020 | 12 | 2020 |
| Hydrogen-Terminated Diamond MOSFETs Using Ultrathin Glassy Ga2O3 Dielectric Formed by Low-Temperature Liquid Metal Printing Method K Xing, P Aukarasereenont, S Rubanov, A Zavabeti, DL Creedon, W Li, ... ACS Applied Electronic Materials 4 (5), 2272-2280, 2022 | 9 | 2022 |
| Defects, band bending and ionization rings in MoS2 I Di Bernardo, J Blyth, L Watson, K Xing, YH Chen, SY Chen, ... Journal of Physics: Condensed Matter 34, 174002, 2022 | 7 | 2022 |
| Surface Transfer Doping of Diamond Using Solution-Processed Molybdenum Trioxide K Xing, W Li, E Della Gaspera, J van Embden, L Zhang, SA Yianni, ... Carbon 175, 20-26, 2021 | 7 | 2021 |
| Engineering the spin–orbit interaction in surface conducting diamond with a solid-state gate dielectric K Xing, A Tsai, DL Creedon, SA Yianni, JC McCallum, L Ley, DC Qi, ... Applied Physics Letters 116 (17), 2020 | 7 | 2020 |
| Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond SA Yianni, DL Creedon, AK Schenk, K Xing, G Akhgar, DI Hoxley, L Ley, ... Diamond and Related Materials 116, 108377, 2021 | 6 | 2021 |
| Is Charge-Transfer Doping Possible at the Interfaces of Monolayer VSe2 with MoO3 and K? L Zhang, X He, K Xing, W Zhang, A Tadich, PKJ Wong, DC Qi, ATS Wee ACS applied materials & interfaces 11 (46), 43789-43795, 2019 | 4 | 2019 |
| P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3 YH Chen, K Xing, S Liu, LN Holtzman, DL Creedon, JC McCallum, ... ACS Applied Electronic Materials 4, 5379, 2022 | 3 | 2022 |
Dongchen Qi (祁东晨)Associate Professor of Physics, Queensland University of TechnologyVerified email at qut.edu.au
