Yuta Saito
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Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials
Y Sutou, T Kamada, M Sumiya, Y Saito, J Koike
Acta materialia 60 (3), 872-880, 2012
Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices
J Tominaga, AV Kolobov, PJ Fons, X Wang, Y Saito, T Nakano, M Hase, ...
Science and technology of advanced materials, 2015
Mirror-symmetric magneto-optical Kerr rotation using visible light in [(GeTe) 2 (Sb2Te3) 1] n topological superlattices
D Bang, H Awano, J Tominaga, AV Kolobov, P Fons, Y Saito, K Makino, ...
Scientific reports 4 (1), 1-7, 2014
Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization
S Hatayama, Y Sutou, S Shindo, Y Saito, YH Song, D Ando, J Koike
ACS applied materials & interfaces 10 (3), 2725-2734, 2018
Self‐organized van der Waals epitaxy of layered chalcogenide structures
Y Saito, P Fons, AV Kolobov, J Tominaga
physica status solidi (b) 252 (10), 2151-2158, 2015
Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb2Te3 Superlattices
AV Kolobov, P Fons, Y Saito, J Tominaga
ACS omega 2 (9), 6223-6232, 2017
Optical contrast and laser-induced phase transition in GeCu2Te3 thin film
Y Saito, Y Sutou, J Koike
Applied Physics Letters 102 (5), 051910, 2013
Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory
T Kamada, Y Sutou, M Sumiya, Y Saito, J Koike
Thin Solid Films 520 (13), 4389-4393, 2012
A two-step process for growth of highly oriented Sb2Te3 using sputtering
Y Saito, P Fons, L Bolotov, N Miyata, AV Kolobov, J Tominaga
AIP Advances 6 (4), 045220, 2016
Significant volume expansion as a precursor to ablation and micropattern formation in phase change material induced by intense terahertz pulses
K Makino, K Kato, K Takano, Y Saito, J Tominaga, T Nakano, G Isoyama, ...
Scientific reports 8 (1), 1-8, 2018
THz Pulse Detection by Multilayered GeTe/Sb2Te3
K Makino, S Kuromiya, K Takano, K Kato, M Nakajima, Y Saito, ...
ACS Applied Materials & Interfaces 8 (47), 32408-32413, 2016
Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing
Y Saito, AV Kolobov, P Fons, KV Mitrofanov, K Makino, J Tominaga, ...
Applied Physics Letters 114 (13), 132102, 2019
Ab‐initio calculations and structural studies of (SiTe) 2 (Sb2Te3) n (n: 1, 2, 4 and 6) phase‐change superlattice films
Y Saito, J Tominaga, P Fons, AV Kolobov, T Nakano
physica status solidi (RRL)-Rapid Research Letters 8 (4), 302-306, 2014
Fourfold coordinated Te atoms in amorphous GeCu2Te3 phase change material
P Jovari, Y Sutou, I Kaban, Y Saito, J Koike
Scripta Materialia 68 (2), 122-125, 2013
Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory
S Shindo, Y Sutou, J Koike, Y Saito, YH Song
Materials Science in Semiconductor Processing 47, 1-6, 2016
Phase change characteristics in GeTe–CuTe pseudobinary alloy films
Y Saito, Y Sutou, J Koike
The Journal of Physical Chemistry C 118 (46), 26973-26980, 2014
A Magnetoresistance Induced by a Nonzero Berry Phase in GeTe/Sb2Te3 Chalcogenide Superlattices
J Tominaga, Y Saito, K Mitrofanov, N Inoue, P Fons, AV Kolobov, ...
Advanced Functional Materials 27 (40), 1702243, 2017
55-µA GexTe1−x/Sb2Te3superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures
N Takaura, T Ohyanagi, M Tai, M Kinoshita, K Akita, T Morikawa, ...
2014 IEEE International Electron Devices Meeting, 29.2. 1-29.2. 4, 2014
Zener tunneling breakdown in phase-change materials revealed by intense terahertz pulses
Y Sanari, T Tachizaki, Y Saito, K Makino, P Fons, AV Kolobov, ...
Physical review letters 121 (16), 165702, 2018
Electronic Structure of Transition-Metal Based Cu2GeTe3 Phase Change Material: Revealing the Key Role of Cu d Electrons
Y Saito, Y Sutou, P Fons, S Shindo, X Kozina, JM Skelton, AV Kolobov, ...
Chemistry of Materials 29 (17), 7440-7449, 2017
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