A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs G Romano, A Fayyaz, M Riccio, L Maresca, G Breglio, A Castellazzi, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 978-987, 2016 | 259 | 2016 |
SiC power MOSFETs performance, robustness and technology maturity A Castellazzi, A Fayyaz, G Romano, L Yang, M Riccio, A Irace Microelectronics Reliability 58, 164-176, 2016 | 136 | 2016 |
Short-circuit failure mechanism of SiC power MOSFETs G Romano, L Maresca, M Riccio, V d'Alessandro, G Breglio, A Irace, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 101 | 2015 |
A temperature-dependent SPICE model of SiC power MOSFETs for within and out-of-SOA simulations M Riccio, V d'Alessandro, G Romano, L Maresca, G Breglio, A Irace IEEE Transactions on power electronics 33 (9), 8020-8029, 2017 | 77 | 2017 |
UIS failure mechanism of SiC power MOSFETs A Fayyaz, A Castellazzi, G Romano, M Riccio, A Irace, J Urresti, N Wright 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 60 | 2016 |
A comprehensive study on the avalanche breakdown robustness of silicon carbide power MOSFETs A Fayyaz, G Romano, J Urresti, M Riccio, A Castellazzi, A Irace, N Wright Energies 10 (4), 452, 2017 | 49 | 2017 |
Body diode reliability investigation of SiC power MOSFETs A Fayyaz, G Romano, A Castellazzi Microelectronics Reliability 64, 530-534, 2016 | 38 | 2016 |
Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs G Romano, M Riccio, L Maresca, G Breglio, A Irace, A Fayyaz, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 33 | 2016 |
Transient out-of-SOA robustness of SiC power MOSFETs A Castellazzi, A Fayyaz, G Romano, M Riccio, A Irace, J Urresti-Ibanez, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 2A-3.1-2A-3.8, 2017 | 30 | 2017 |
Short circuit robustness analysis of new generation Enhancement-mode p-GaN power HEMTs M Riccio, G Romano, L Maresca, G Breglio, A Irace, G Longobardi 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 26 | 2018 |
Investigation of pyroelectric fields generated by lithium niobate crystals through integrated microheaters S Bhowmick, M Iodice, M Gioffrè, G Breglio, A Irace, M Riccio, G Romano, ... Sensors and Actuators A: Physical 261, 140-150, 2017 | 25 | 2017 |
Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs A Fayyaz, A Castellazzi, G Romano, M Riccio, A Irace, J Urresti, N Wright 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 24 | 2017 |
An ultrafast IR thermography system for transient temperature detection on electronic devices G Romano, M Riccio, G De Falco, L Maresca, A Irace, G Breglio 2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM …, 2014 | 24 | 2014 |
Planar 1.2 kV SiC MOSFETs with retrograde channel profile for enhanced ruggedness L Knoll, A Mihaila, S Wirths, Y Arango, A Prasmusinto, E Bianda, L Kranz, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 16 | 2019 |
Model-order reduction procedure for fast dynamic electrothermal simulation of power converters AP Catalano, M Riccio, L Codecasa, A Magnani, G Romano, ... Applications in Electronics Pervading Industry, Environment and Society …, 2019 | 15 | 2019 |
ELDO-COMSOL based 3D electro-thermal simulations of power semiconductor devices G De Falco, M Riccio, G Romano, L Maresca, A Irace, G Breglio 2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM …, 2014 | 14 | 2014 |
Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module M Riccio, A Borghese, G Romano, V d'Alessandro, A Fayyaz, ... 2018 20th European Conference on Power Electronics and Applications (EPE'18 …, 2018 | 13 | 2018 |
Vertical power SiC MOSFETs with high-k gate dielectrics and superior threshold voltage stability S Wirths, Y Arango, A Mihaila, M Bellini, G Romano, G Alfieri, M Belanche, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 11 | 2020 |
Experimental analysis of electro-thermal interaction in normally-off pGaN HEMT devices M Riccio, G Romano, A Borghese, L Maresca, G Breglio, A Irace, ... 2018 IEEE International Conference on Electrical Systems for Aircraft …, 2018 | 11 | 2018 |
Study of 1.2 kV high-k SiC power MOSFETS under harsh repetitive switching conditions S Wirths, A Mihaila, G Romano, N Schneider, E Ceccarelli, G Alfieri, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 8 | 2021 |