Current status and future trends of SiGe BiCMOS technology DL Harame, DC Ahlgren, DD Coolbaugh, JS Dunn, GG Freeman, ... IEEE Transactions on Electron Devices 48 (11), 2575-2594, 2001 | 229 | 2001 |
Power amplifier modules including related systems, devices, and methods HE Chen, Y Guo, DV Hoang, M Janani, TM Ko, PJ Lehtola, AJ LoBianco, ... US Patent 9,041,472, 2015 | 139* | 2015 |
Design of high-efficiency current-mode class-D amplifiers for wireless handsets TP Hung, AG Metzger, PJ Zampardi, M Iwamoto, PM Asbeck IEEE transactions on microwave theory and techniques 53 (1), 144-151, 2005 | 103 | 2005 |
Fast novel thermal analysis simulation tool for integrated circuits (FANTASTIC) L Codecasa, V d'Alessandro, A Magnani, N Rinaldi, PJ Zampardi 20th International Workshop on Thermal Investigations of ICs and Systems, 1-6, 2014 | 97 | 2014 |
A comparison of linear handset power amplifiers in different bipolar technologies K Nellis, PJ Zampardi IEEE Journal of Solid-State Circuits 39 (10), 1746-1754, 2004 | 77 | 2004 |
Linearity improvement of HBT-based Doherty power amplifiers based on a simple analytical model Y Zhao, AG Metzger, PJ Zampardi, M Iwamoto, PM Asbeck IEEE transactions on microwave theory and techniques 54 (12), 4479-4488, 2006 | 63 | 2006 |
BiFET INCLUDING A FET HAVING INCREASED LINEARITY AND MANUFACTURABILITY PJ Zampardi, RN Pierson US Patent 6,906,359, 2005 | 51 | 2005 |
A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies S Zhang, G Niu, JD Cressler, SJ Mathew, U Gogineni, SD Clark, ... IEEE Transactions on Nuclear Science 47 (6), 2521-2527, 2000 | 48 | 2000 |
GaInP/GaAs HBT's for high-speed integrated circuit applications WJ Ho, MF Chang, A Sailer, P Zampardi, D Deakin, B McDermott, ... IEEE Transactions on Electron Devices 40 (11), 2113-2114, 1993 | 48 | 1993 |
A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment … F Rotella, BK Bhattacharya, V Blaschke, M Matloubian, A Brotman, ... IEEE transactions on electron devices 52 (7), 1429-1441, 2005 | 44 | 2005 |
Process-compensated HBT power amplifier bias circuits and methods DS Ripley, PJ Lehtola, PJ Zampardi, H Shao, TM Ko, MT Ozalas US Patent 9,419,567, 2016 | 40 | 2016 |
Characterization of heterojunction bipolar transistor structures using cross-sectional scanning force microscopy PA Rosenthal, ET Yu, RL Pierson, PJ Zampardi Journal of Applied Physics 87 (4), 1937-1942, 2000 | 40 | 2000 |
Apparatus and methods for reducing impact of high RF loss plating W Sun, PJ Zampardi, H Shao US Patent 8,896,091, 2014 | 39 | 2014 |
Power amplifier modules including bipolar transistor with grading and related systems, devices, and methods TM Ko, PJ Lehtola, MT Ozalas, DS Ripley, H Shao, PJ Zampardi US Patent 9,520,835, 2016 | 38 | 2016 |
Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications PF Chen, UMT Hsin, RJ Welty, PM Asbeck, RL Pierson, PJ Zampardi, ... IEEE transactions on microwave theory and techniques 47 (8), 1433-1438, 1999 | 38 | 1999 |
Role of neutral base recombination in high gain AlGaAs/GaAs HBT's RE Welser, N Pan, DP Vu, PJ Zampardi, BT McDermott IEEE Transactions on Electron Devices 46 (8), 1599-1607, 1999 | 38 | 1999 |
Methods and apparatus for a composite collector double heterojunction bipolar transistor CE Chang, RL Pierson, PJ Zampardi, PM Asbeck US Patent 6,563,145, 2003 | 36 | 2003 |
Power amplifier modules including wire bond pad and related systems, devices, and methods HB Modi, SL Petty-Weeks, H Shao, W Sun, PJ Zampardi, G Zhang US Patent 9,660,584, 2017 | 35 | 2017 |
40 Gbit/s AlGaAs/GaAs HBT 4: 1 multiplexer IC K Runge, RL Pierson, PJ Zampardi, PB Thomas, J Yu, KC Wang Electronics Letters 31 (11), 876-877, 1995 | 35 | 1995 |
Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments V d'Alessandro, AP Catalano, L Codecasa, PJ Zampardi, B Moser International Journal of Numerical Modelling: Electronic Networks, Devices …, 2019 | 34 | 2019 |