| Mode-locked pulses from mid-infrared quantum cascade lasers CY Wang, L Kuznetsova, VM Gkortsas, L Diehl, FX Kaertner, MA Belkin, ... Optics Express 17 (15), 12929-12943, 2009 | 269 | 2009 |
| Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE P Vennéguès, B Beaumont, S Haffouz, M Vaille, P Gibart Journal of crystal growth 187 (2), 167-177, 1998 | 172 | 1998 |
| Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy B Beaumont, S Haffouz, P Gibart Applied Physics Letters 72 (8), 921-923, 1998 | 149 | 1998 |
| Method for producing a gallium nitride epitaxial layer B Beaumont, P Gibart, JC Guillaume, G Nataf, M Vaille, S Haffouz US Patent 6,325,850, 2001 | 143 | 2001 |
| Luminescence and reflectivity studies of undoped, n-and p-doped GaN on (0001) sapphire M Leroux, B Beaumont, N Grandjean, P Lorenzini, S Haffouz, ... Materials Science and Engineering: B 50 (1-3), 97-104, 1997 | 127 | 1997 |
| The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy S Haffouz, H Lahreche, P Vennéguès, P De Mierry, B Beaumont, ... Applied physics letters 73 (9), 1278-1280, 1998 | 114 | 1998 |
| Bright single InAsP quantum dots at telecom wavelengths in position-controlled InP nanowires: the role of the photonic waveguide S Haffouz, KD Zeuner, D Dalacu, PJ Poole, J Lapointe, D Poitras, ... Nano letters 18 (5), 3047-3052, 2018 | 113 | 2018 |
| High quality GaN layers on Si (111) substrates: AlN buffer layer optimisation and insertion of a SiN intermediate layer PR Hageman, S Haffouz, V Kirilyuk, A Grzegorczyk, PK Larsen physica status solidi (a) 188 (2), 523-526, 2001 | 109 | 2001 |
| Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy B Beaumont, M Vaille, G Nataf, A Bouillé, JC Guillaume, P Vennégues, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1998 | 83 | 1998 |
| Effect of magnesium and silicon on the lateral overgrowth of GaN patterned substrates by metal organic vapor phase epitaxy S Haffouz, B Beaumont, P Gibart MRS Internet Journal of Nitride Semiconductor Research 3, 1-6, 1998 | 77 | 1998 |
| Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors SP McAlister, JA Bardwell, S Haffouz, H Tang Journal of Vacuum Science & Technology A 24 (3), 624-628, 2006 | 75 | 2006 |
| Process for producing an epitaxial layer of gallium nitride B Beaumont, P Gibart, JC Guillaume, G Nataf, M Vaille, S Haffouz US Patent 6,802,902, 2004 | 68 | 2004 |
| Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy F González-Posada, JA Bardwell, S Moisa, S Haffouz, H Tang, AF Brana, ... Applied surface science 253 (14), 6185-6190, 2007 | 58 | 2007 |
| Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy G Nataf, B Beaumont, A Bouillé, S Haffouz, M Vaille, P Gibart Journal of crystal growth 192 (1-2), 73-78, 1998 | 58 | 1998 |
| On‐chip integration of single photon sources via evanescent coupling of tapered nanowires to SiN waveguides K Mnaymneh, D Dalacu, J McKee, J Lapointe, S Haffouz, JF Weber, ... Advanced Quantum Technologies 3 (2), 1900021, 2020 | 56 | 2020 |
| Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates B Beaumont, P Gibart, M Vaille, S Haffouz, G Nataf, A Bouillé Journal of crystal growth 189, 97-102, 1998 | 55 | 1998 |
| AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy S Haffouz, H Tang, JA Bardwell, EM Hsu, JB Webb, S Rolfe Solid-state electronics 49 (5), 802-807, 2005 | 54 | 2005 |
| GaN-based solar-ultraviolet detection instrument E Monroy, F Calle, C Angulo, P Vila, A Sanz, JA Garrido, E Calleja, ... Applied optics 37 (22), 5058-5062, 1998 | 51 | 1998 |
| Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height S Haffouz, PJ Barrios, R Normandin, D Poitras, Z Lu Optics letters 37 (6), 1103-1105, 2012 | 41 | 2012 |
| Optimization of Si/N treatment time of sapphire surface and its effect on the MOVPE GaN overlayers S Haffouz, B Beaumont, P Vennegues, P Gibart physica status solidi (a) 176 (1), 677-681, 1999 | 38 | 1999 |
Philip PooleNational Research CouncilVerified email at nrc-cnrc.gc.ca
