| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 151 | 2018 |
| 13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019 | 134 | 2019 |
| Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide J Brockman, L Gao, B Hughes, CT Rettner, MG Samant, KP Roche, ... Nature Nanotechnology 9 (6), 453-458, 2014 | 122 | 2014 |
| 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 106 | 2019 |
| Oscillation effects and time variation of the supernova neutrino signal JP Kneller, GC McLaughlin, J Brockman Physical Review D—Particles, Fields, Gravitation, and Cosmology 77 (4), 045023, 2008 | 91 | 2008 |
| Substrate-induced disorder in V2O3 thin films grown on annealed c-plane sapphire substrates J Brockman, MG Samant, KP Roche, SSP Parkin Applied Physics Letters 101 (5), 2012 | 58 | 2012 |
| Increased metal-insulator transition temperatures in epitaxial thin films of V2O3 prepared in reduced oxygen environments J Brockman, NP Aetukuri, T Topuria, MG Samant, KP Roche, SSP Parkin Applied Physics Letters 98 (15), 152105-152105-3, 2011 | 54 | 2011 |
| Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability MJ Mutch, T Pomorski, BC Bittel, CJ Cochrane, PM Lenahan, X Liu, ... Microelectronics Reliability 63, 201-213, 2016 | 26 | 2016 |
| Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics SW King, MM Paquette, JW Otto, AN Caruso, J Brockman, J Bielefeld, ... Applied Physics Letters 104 (10), 2014 | 20 | 2014 |
| Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper SW King, M French, G Xu, B French, M Jaehnig, J Bielefeld, J Brockman, ... Applied surface science 285, 545-551, 2013 | 17 | 2013 |
| Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures DG Ouellette, CJ Wiegand, MT Rahman, B Maertz, O Golonzka, ... US Patent 10,868,233, 2020 | 15 | 2020 |
| Band alignment at molybdenum disulphide/boron nitride/aluminum oxide interfaces J DiStefano, YC Lin, J Robinson, NR Glavin, AA Voevodin, J Brockman, ... Journal of Electronic Materials 45, 983-988, 2016 | 15 | 2016 |
| Valence and conduction band offsets at low-k a-SiOxCy: H/a-SiCxNy: H interfaces SW King, J Brockman, M French, M Jaehnig, M Kuhn, B French Journal of Applied Physics 116 (11), 2014 | 15 | 2014 |
| X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces D Koh, SK Banerjee, J Brockman, M Kuhn, SW King Diamond and Related Materials 101, 107647, 2020 | 13 | 2020 |
| PSTTM device with bottom electrode interface material K Oguz, KP O'brien, CJ Wiegand, MT Rahman, BS Doyle, ML Doczy, ... US Patent 10,340,445, 2019 | 13 | 2019 |
| PSTTM device with free magnetic layers coupled through a metal layer having high temperature stability K Oguz, KP O'brien, CJ Wiegand, T Rahman, BS Doyle, ML Doczy, ... US Patent 10,580,970, 2020 | 10 | 2020 |
| Perpendicular magnetic memory with symmetric fixed layers CC Kuo, JS Brockman, JGA VINASCO, K Oguz, KP O'brien, BS Doyle, ... US Patent 10,832,749, 2020 | 9 | 2020 |
| IEEE Int. Electron Devices Meet O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... the press); https://ieee-iedm. org/program, 2018 | 9 | 2018 |
| Electric field-induced conductivity switching in vanadium sesquioxide nanostructures J Brockman Stanford University, 2012 | 7 | 2012 |
| M, Mainuddin, M O Golonzka, J Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... Meterelliyoz, P. Nguyen, D. Nikonov, K. O'brien, JO Donnell, K. Oguz, D …, 0 | 7 | |
Chris WiegandIntelVerified email at intel.com
