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Jingsheng Chen
Jingsheng Chen
Department of Materials Science and Engineering, National University of Singapore
Verified email at nus.edu.sg
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Cited by
Year
Defect engineering of oxygen‐deficient manganese oxide to achieve high‐performing aqueous zinc ion battery
T Xiong, ZG Yu, H Wu, Y Du, Q Xie, J Chen, YW Zhang, SJ Pennycook, ...
Advanced Energy Materials 9 (14), 1803815, 2019
3202019
Origin of the two-dimensional electron gas at LaAlO 3/SrTiO 3 interfaces: the role of oxygen vacancies and electronic reconstruction
ZQ Liu, CJ Li, WM Lü, XH Huang, Z Huang, SW Zeng, XP Qiu, LS Huang, ...
Physical Review X 3 (2), 021010, 2013
3132013
Memristor with Ag‐Cluster‐Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing
X Yan, J Zhao, S Liu, Z Zhou, Q Liu, J Chen, XY Liu
Advanced Functional Materials 28 (1), 1705320, 2018
2622018
In situ ordering of FePt thin films with face-centered-tetragonal (001) texture on underlayer at low substrate temperature
Y Xu, JS Chen, JP Wang
Applied physics letters 80 (18), 3325-3327, 2002
2582002
Polycrystalline ZnO thin films on Si (1 0 0) deposited by filtered cathodic vacuum arc
XL Xu, SP Lau, JS Chen, GY Chen, BK Tay
Journal of Crystal Growth 223 (1-2), 201-205, 2001
2482001
A novel amperometric biosensor based on ZnO: Co nanoclusters for biosensing glucose
ZW Zhao, XJ Chen, BK Tay, JS Chen, ZJ Han, KA Khor
Biosensors and Bioelectronics 23 (1), 135-139, 2007
1792007
Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning
X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou
Advanced Functional Materials 28 (40), 1803728, 2018
1682018
20.7% highly reproducible inverted planar perovskite solar cells with enhanced fill factor and eliminated hysteresis
X Liu, Y Cheng, C Liu, T Zhang, N Zhang, S Zhang, J Chen, Q Xu, ...
Energy & Environmental Science 12 (5), 1622-1633, 2019
1572019
Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors
X Yan, Y Pei, H Chen, J Zhao, Z Zhou, H Wang, L Zhang, J Wang, X Li, ...
Advanced materials 31 (7), 1805284, 2019
1562019
Vacancy‐Induced Synaptic Behavior in 2D WS2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing
X Yan, Q Zhao, AP Chen, J Zhao, Z Zhou, J Wang, H Wang, L Zhang, X Li, ...
Small 15 (24), 1901423, 2019
1552019
Origin of room temperature ferromagnetism in ZnO: Cu films
TS Herng, SP Lau, SF Yu, HY Yang, XH Ji, JS Chen, N Yasui, H Inaba
Journal of Applied Physics 99 (8), 086101, 2006
1472006
Artificial synapses based on multiterminal memtransistors for neuromorphic application
L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
1372019
Ferroelectric HfO2-based materials for next-generation ferroelectric memories
Z Fan, J Chen, J Wang
Journal of Advanced Dielectrics 6 (02), 1630003, 2016
1302016
Flexible piezoelectric nanocomposite generators based on formamidinium lead halide perovskite nanoparticles
R Ding, H Liu, X Zhang, J Xiao, R Kishor, H Sun, B Zhu, G Chen, F Gao, ...
Advanced Functional Materials 26 (42), 7708-7716, 2016
1232016
Magnetic anisotropy in the ferromagnetic Cu-doped ZnO nanoneedles
TS Herng, SP Lau, SF Yu, HY Yang, L Wang, M Tanemura, JS Chen
Applied physics letters 90 (3), 032509, 2007
1222007
Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction
SM Poh, SJR Tan, H Wang, P Song, IH Abidi, X Zhao, J Dan, J Chen, ...
Nano letters 18 (10), 6340-6346, 2018
1162018
Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing
HY Yoong, H Wu, J Zhao, H Wang, R Guo, J Xiao, B Zhang, P Yang, ...
Advanced Functional Materials 28 (50), 1806037, 2018
1082018
Low temperature deposited FePt–C (001) films with high coercivity and small grain size
JS Chen, BC Lim, JF Hu, B Liu, GM Chow, G Ju
Applied Physics Letters 91 (13), 132506, 2007
1062007
Promotion of ordered phase transformation by the Ag top layer on FePt thin films
ZL Zhao, J Ding, K Inaba, JS Chen, JP Wang
Applied physics letters 83 (11), 2196-2198, 2003
1062003
High coercivity FePt films with perpendicular anisotropy deposited on glass substrate at reduced temperature
JS Chen, BC Lim, JF Hu, YK Lim, B Liu, GM Chow
Applied physics letters 90 (4), 042508, 2007
1002007
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