| Review of semiconductor flash memory devices for material and process issues SS Kim, SK Yong, W Kim, S Kang, HW Park, KJ Yoon, DS Sheen, S Lee, ... Advanced Materials 35 (43), 2200659, 2023 | 67 | 2023 |
| Kernel Application of the Stacked Crossbar Array Composed of Self‐Rectifying Resistive Switching Memory for Convolutional Neural Networks Y Kim, J Kim, SS Kim, YJ Kwon, GS Kim, JW Jeon, DE Kwon, JH Yoon, ... Advanced Intelligent Systems 2 (2), 1900116, 2020 | 13 | 2020 |
| Copper bottom-up filling by electroplating without any additives on patterned wafer SH Cha, SS Kim, SK Cho, JJ Kim Electrochemical and solid-state letters 10 (2), D22, 2006 | 11 | 2006 |
| Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure T Park, SS Kim, BJ Lee, TW Park, HJ Kim, CS Hwang Nanoscale 15 (13), 6387-6395, 2023 | 6 | 2023 |
| Influences of oxygen source and substrate temperature on the unusual growth mechanism of atomic layer deposited magnesium oxide using bis (cyclopentadienyl) magnesium precursor BW Wang, J Choi, HG Kim, SD Hyun, C Yoo, S Kim, H Lee, CS Hwang Journal of Materials Chemistry C 9 (42), 15359-15374, 2021 | 6 | 2021 |
| Bottom-up filling using electrochemical oxidation on patterned wafers SH Cha, SS Kim, SK Cho, JJ Kim Electrochemical and Solid-State Letters 8 (11), C170, 2005 | 4 | 2005 |
| Improving the water-resistance of MgO-based metal–insulator–metal capacitors by inserting a BeO thin film grown via atomic layer deposition BW Wang, S Kim, H Song, H Seo, X Li, JM Choi, J Choi, J Shin, ... Journal of Materials Chemistry C 10 (17), 6611-6620, 2022 | 1 | 2022 |
| Heterogeneous reservoir computing in second-order Ta 2 O 5/HfO 2 memristors N Ghenzi, TW Park, SS Kim, HJ Kim, YH Jang, KS Woo, CS Hwang Nanoscale Horizons, 2024 | | 2024 |
| Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading SS Kim, SK Yong, J Kim, JM Choi, TW Park, HY Kim, HJ Kim, CS Hwang Advanced Electronic Materials 9 (3), 2200998, 2023 | | 2023 |
