| Surface oxidation states of germanium D Schmeisser, RD Schnell, A Bogen, FJ Himpsel, D Rieger, G Landgren, ... Surface science 172 (2), 455-465, 1986 | 339 | 1986 |
| Synchrotron photoemission investigation of the initial stages of fluorine attack on Si surfaces: Relative abundance of fluorosilyl species FR McFeely, JF Morar, ND Shinn, G Landgren, FJ Himpsel Physical review B 30 (2), 764, 1984 | 260 | 1984 |
| The oxidation of GaAs (110): A reevaluation G Landgren, R Ludeke, Y Jugnet, JF Morar, FJ Himpsel Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1984 | 164 | 1984 |
| Electronic structure of strontium titanate B Reihl, JG Bednorz, KA Müller, Y Jugnet, G Landgren, JF Morar Physical Review B 30 (2), 803, 1984 | 135 | 1984 |
| Angle-resolved photoemission studies of GaAs (100) surfaces grown by molecular-beam epitaxy TC Chiang, R Ludeke, M Aono, G Landgren, FJ Himpsel, DE Eastman Physical Review B 27 (8), 4770, 1983 | 113 | 1983 |
| First results from a 6 m/10 m toroidal grating monochromator for soft x-rays FJ Himpsel, Y Jugnet, DE Eastman, JJ Donelon, D Grimm, G Landgren, ... Nuclear Instruments and Methods in Physics Research 222 (1-2), 107-110, 1984 | 101 | 1984 |
| Interface behavior and crystallographic relationships of aluminum on GaAs (100) surfaces R Ludeke, G Landgren Journal of Vacuum Science and Technology 19 (3), 667-673, 1981 | 100 | 1981 |
| Observation of superlattice effects on the electronic bands of multilayer heterostructures EE Mendez, LL Chang, G Landgren, R Ludeke, L Esaki, FH Pollak Physical Review Letters 46 (18), 1230, 1981 | 83 | 1981 |
| Electronic properties and chemistry of Ti/GaAs and Pd/GaAs interfaces R Ludeke, G Landgren Physical Review B 33 (8), 5526, 1986 | 80 | 1986 |
| Synchrotron photoemission investigation: Fluorine on silicon surfaces JF Morar, FR McFeely, ND Shinn, G Landgren, FJ Himpsel Applied physics letters 45 (2), 174-176, 1984 | 75 | 1984 |
| Optical bistability and gating in metalorganic vapor phase epitaxy grown GaAs etalons operating in reflection O Sahlen, U Olin, E Masseboeuf, G Landgren, M Rask Applied physics letters 50 (22), 1559-1561, 1987 | 50 | 1987 |
| Oxidation of GaAs (110): new results and models G Landgren, R Ludeke, JF Morar, Y Jugnet, FJ Himpsel Physical Review B 30 (8), 4839, 1984 | 50 | 1984 |
| Al–GaAs (001) Schottky barrier formation SP Svensson, G Landgren, TG Andersson Journal of applied physics 54 (8), 4474-4481, 1983 | 47 | 1983 |
| Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy H Chen, RM Feenstra, RS Goldman, C Silfvenius, G Landgren The American Institute of Physics, 1998 | 44 | 1998 |
| Intersubband transitions in single AlGaAs/GaAs quantum wells studied by Fourier transform infrared spectroscopy JY Andersson, G Landgren Journal of applied physics 64 (8), 4123-4127, 1988 | 44 | 1988 |
| Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers K Streubel, J Wallin, G Landgren, U Öhlander, S Lourdudoss, O Kjebon Journal of crystal growth 143 (1-2), 7-14, 1994 | 42 | 1994 |
| Diffusion of Zn and Mg in AlGaAs/GaAs structures grown by metalorganic vapor‐phase epitaxy N Nordell, P Ojala, WH Van Berlo, G Landgren, MK Linnarsson Journal of applied physics 67 (2), 778-786, 1990 | 42 | 1990 |
| Epitaxial a1 films on gaas (100) surfaces G Landgren, R Ludeke, C Serrano Journal of Crystal Growth 60 (2), 393-402, 1982 | 41 | 1982 |
| Interwell carrier transport in InGaAsP multiple quantum well laser structures K Fröjdh, S Marcinkevičius, U Olin, C Silfvenius, B Stålnacke, G Landgren Applied physics letters 69 (24), 3695-3697, 1996 | 40 | 1996 |
| 1.55 μm buried heterostructure laser via regrowth of semi‐insulating InP: Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen O Kjebon, S Lourdudoss, B Hammarlund, S Lindgren, M Rask, P Ojala, ... Applied physics letters 59 (3), 253-255, 1991 | 40 | 1991 |
