| Broadband graphene terahertz modulators enabled by intraband transitions B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ... Nature communications 3 (1), 780, 2012 | 1157 | 2012 |
| Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy R Yan, JR Simpson, S Bertolazzi, J Brivio, M Watson, X Wu, A Kis, T Luo, ... ACS nano 8 (1), 986-993, 2014 | 912 | 2014 |
| Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ... ACS nano 7 (2), 1072-1080, 2013 | 890 | 2013 |
| Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures J Simon, V Protasenko, C Lian, H Xing, D Jena Science 327 (5961), 60-64, 2010 | 862 | 2010 |
| Carrier statistics and quantum capacitance of graphene sheets and ribbons T Fang, A Konar, H Xing, D Jena Applied Physics Letters 91 (9), 2007 | 840 | 2007 |
| Heavy doping effects in Mg-doped GaN P Kozodoy, H Xing, SP DenBaars, UK Mishra, A Saxler, R Perrin, ... Journal of Applied Physics 87 (4), 1832-1835, 2000 | 489 | 2000 |
| High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra IEEE Electron Device Letters 25 (4), 161-163, 2004 | 486 | 2004 |
| InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ... IEEE Electron Device Letters 33 (7), 988-990, 2012 | 426 | 2012 |
| Intrinsic electron mobility limits in β-Ga2O3 N Ma, N Tanen, A Verma, Z Guo, T Luo, HG Xing, D Jena Applied Physics Letters 109 (21), 2016 | 405 | 2016 |
| High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, ... Applied Physics Letters 104 (20), 2014 | 399 | 2014 |
| Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ... Nano letters 15 (9), 5791-5798, 2015 | 379 | 2015 |
| Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering T Fang, A Konar, H Xing, D Jena Physical Review B—Condensed Matter and Materials Physics 78 (20), 205403, 2008 | 325 | 2008 |
| Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ... Applied physics letters 101 (1), 2012 | 312 | 2012 |
| Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ... IEEE Electron Device Letters 39 (6), 869-872, 2018 | 306 | 2018 |
| Extraordinary control of terahertz beam reflectance in graphene electro-absorption modulators B Sensale-Rodriguez, R Yan, S Rafique, M Zhu, W Li, X Liang, ... Nano letters 12 (9), 4518-4522, 2012 | 305 | 2012 |
| Graphene nanoribbon tunnel transistors Q Zhang, T Fang, H Xing, A Seabaugh, D Jena IEEE Electron Device Letters 29 (12), 1344-1346, 2008 | 301 | 2008 |
| Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2 W Li, K Nomoto, Z Hu, D Jena, HG Xing IEEE Electron Device Letters 41 (1), 107-110, 2019 | 256 | 2019 |
| Unique prospects for graphene-based terahertz modulators B Sensale-Rodriguez, T Fang, R Yan, MM Kelly, D Jena, L Liu Applied Physics Letters 99 (11), 2011 | 256 | 2011 |
| Polarization-enhanced Mg doping of AlGaN/GaN superlattices P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ... Applied Physics Letters 75 (16), 2444-2446, 1999 | 232 | 1999 |
| Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ... Applied Physics Letters 101 (2), 2012 | 227 | 2012 |
Debdeep JenaCornell UniversityVerified email at cornell.edu
