Mika Saarinen
Mika Saarinen
Tampere University
Verified email at tuni.fi
Title
Cited by
Cited by
Year
High-speed resonant cavity light-emitting diodes at 650 nm
MM Dumitrescu, MJ Saarinen, MD Guina, MV Pessa
IEEE Journal of selected topics in quantum electronics 8 (2), 219-230, 2002
592002
Electronic and structural properties of Ga As (100)(2× 4) and In As (100)(2× 4) surfaces studied by core-level photoemission and scanning tunneling microscopy
P Laukkanen, M Kuzmin, RE Perälä, M Ahola, S Mattila, IJ Väyrynen, ...
Physical Review B 72 (4), 045321, 2005
492005
Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy
J Dekker, A Tukiainen, N Xiang, S Orsila, M Saarinen, M Toivonen, ...
Journal of applied physics 86 (7), 3709-3713, 1999
401999
Broadband semiconductor saturable absorber mirrors in the 1.55-/spl mu/m wavelength range for pulse generation in fiber lasers
N Xiang, MD Guina, AM Vainionpaa, J Lyytikainen, S Suomalainen, ...
IEEE journal of quantum electronics 38 (4), 369-374, 2002
362002
Broadband semiconductor saturable absorber mirrors in the 1.55-/spl mu/m wavelength range for pulse generation in fiber lasers
N Xiang, MD Guina, AM Vainionpaa, J Lyytikainen, S Suomalainen, ...
IEEE journal of quantum electronics 38 (4), 369-374, 2002
362002
Resonant cavity light emitting diode for a polymer optical fibre system
M Pessa, M Guina, M Dumitrescu, I Hirvonen, M Saarinen, L Toikkanen, ...
Semiconductor science and technology 17 (6), R1, 2002
312002
Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth
M Guina, S Orsila, M Dumitrescu, M Saarinen, P Sipila, V Vilokkinen, ...
IEEE Photonics Technology Letters 12 (7), 786-788, 2000
312000
Influence of deep level impurities on modulation response of InGaP light emitting diodes
M Guina, J Dekker, A Tukiainen, S Orsila, M Saarinen, M Dumitrescu, ...
Journal of Applied Physics 89 (2), 1151-1155, 2001
302001
Dual-wavelength generation by vertical external cavity surface-emitting laser
T Leinonen, S Ranta, A Laakso, Y Morozov, M Saarinen, M Pessa
Optics express 15 (20), 13451-13456, 2007
222007
Linewidth enhancement factor of semiconductor lasers: Results from Round-Robin measurements in COST 288
A Villafranca, J Lasobras, I Garces, G Giuliani, S Donati, M Chacinski, ...
Conference on Lasers and Electro-Optics, CThK1, 2007
212007
Linewidth enhancement factor of semiconductor lasers: Results from Round-Robin measurements in COST 288
A Villafranca, J Lasobras, I Garces, G Giuliani, S Donati, M Chacinski, ...
Conference on Lasers and Electro-Optics, CThK1, 2007
212007
Temperature behaviour of resonant cavity light-emitting diodes at 650 nm
P Sipilä, M Saarinen, M Guina, V Vilokkinen, M Toivonen, M Pessa
Semiconductor science and technology 15 (4), 418, 2000
212000
High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy
S Orsila, M Toivonen, P Savolainen, V Vilokkinen, P Melanen, M Pessa, ...
In-Plane Semiconductor Lasers III 3628, 203-208, 1999
201999
Structural properties of Bi-stabilized reconstructions of GaInAs (100) surface
P Laukkanen, M Ahola-Tuomi, M Kuzmin, RE Perälä, IJ Väyrynen, ...
Applied physics letters 90 (8), 082101, 2007
172007
Resonant cavity light-emitting diodes at 660 and 880 nm
V Vilokkinen, P Sipilä, P Melanen, M Saarinen, S Orsila, M Dumitrescu, ...
Materials Science and Engineering: B 74 (1-3), 165-167, 2000
172000
AlGaInAs/InP strained-layer quantum well lasers at 1.3 µm grown by solid source molecular beam epitaxy
P Savolainen, M Toivonen, S Orsila, M Saarinen, P Melanen, V Vilokkinen, ...
Journal of electronic materials 28 (8), 980-985, 1999
171999
Effect of pump reflections in vertical external cavity surface-emitting lasers
Y Morozov, T Leinonen, M Morozov, S Ranta, M Saarinen, V Popov, ...
New Journal of Physics 10 (6), 063028, 2008
142008
Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy
M Dumitrescu, L Toikkanen, P Sipilä, V Vilokkinen, P Melanen, ...
Microelectronic Engineering 51, 449-460, 2000
132000
Room-temperature CW operation of red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy
M Saarinen, M Toivonen, N Xiang, V Vilokkinen, M Pessa
Electronics Letters 36 (14), 1210-1211, 2000
122000
Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power
M Saarinen, V Vilokkinen, M Dumitrescu, M Pessa
IEEE Photonics Technology Letters 13 (1), 10-12, 2001
102001
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