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Co-authors
Guangyu ZhangInstitute of Physics, CASVerified email at aphy.iphy.ac.cn
Kenji WatanabeNational Institute for Materials ScienceVerified email at nims.go.jp
Xiaobo Lu (卢晓波)Peking UniversityVerified email at pku.edu.cn
Zhiwen ShiShanghai Jiao Tong UniversityVerified email at sjtu.edu.cn
Adrian BachtoldICFOVerified email at icfo.eu
Jing Zhang (张菁)Professor of Institute of Semiconductor, Chinese Academy of SciencesVerified email at semi.ac.cn
Shuang WuDepartment of Physics, Rutgers UniversityVerified email at physics.rutgers.edu
Cheng ShenPostdoc, EPFLVerified email at epfl.ch
Yuanbo ZhangFudan UniversityVerified email at fudan.edu.cn
Long JuMassachusetts Institute of TechnologyVerified email at mit.edu
Yugui YaoBeijing Institute of TechnologyVerified email at bit.edu.cn
Bernard PlaçaisCNRS researcher, Laboratoire de Physique de l'Ecole Normale Superieure, PSL UniversityVerified email at phys.ens.fr
Luojun DuInstitute of Physics, Chinese Academy of SciencesVerified email at iphy.ac.cn
Guorui ChenShanghai Jiao Tong UniversityVerified email at sjtu.edu.cn
Petr StepanovAssistant Professor, University of Notre DameVerified email at nd.edu
Cheng-Cheng Liu (刘铖铖)Beijing institute of technologyVerified email at bit.edu.cn
Mengzhou LiaoCzech technical university in PragueVerified email at fel.cvut.cz
Chenhao JinUC Santa BarbaraVerified email at ucsb.edu
Gwendal FeveSorbonne Université, Laboratoire de Physique de l'Ecole Normale SupérieureVerified email at ens.fr
Jianpeng LiuAssistant professor, ShanghaiTech UniversityVerified email at shanghaitech.edu.cn