Shadi A. Dayeh
TitleCited byYear
ZnO nanowire UV photodetectors with high internal gain
C Soci, A Zhang, B Xiang, SA Dayeh, DPR Aplin, J Park, XY Bao, YH Lo, ...
Nano letters 7 (4), 1003-1009, 2007
22352007
Anisotropic swelling and fracture of silicon nanowires during lithiation
XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ...
Nano letters 11 (8), 3312-3318, 2011
5842011
Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition
B Xiang, P Wang, X Zhang, Shadi. A. Dayeh,, DPR Aplin, C Soci, D Yu, ...
Nano letters 7 (2), 323-328, 2007
5052007
In situ atomic-scale imaging of electrochemical lithiation in silicon
XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ...
Nature nanotechnology 7 (11), 749, 2012
4192012
Ultrafast electrochemical lithiation of individual Si nanowire anodes
XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ...
Nano letters 11 (6), 2251-2258, 2011
3552011
Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes
B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ...
ACS nano 7 (2), 1437-1445, 2013
3402013
High electron mobility InAs nanowire field‐effect transistors
SA Dayeh, DPR Aplin, X Zhou, PKL Yu, ET Yu, D Wang
small 3 (2), 326-332, 2007
3262007
Precise semiconductor nanowire placement through dielectrophoresis
S Raychaudhuri, SA Dayeh, D Wang, ET Yu
Nano letters 9 (6), 2260-2266, 2009
2152009
III-V nanowire growth mechanism: V/III ratio and temperature effects
A Shadi, TY Edward, D Wang
Nano letters 7 (8), 2486-2490, 2007
1952007
Lattice strain effects on the optical properties of MoS2 nanosheets
L Yang, X Cui, J Zhang, K Wang, M Shen, S Zeng, SA Dayeh, L Feng, ...
Scientific reports 4, 5649, 2014
1752014
Direct observation of nanoscale size effects in Ge semiconductor nanowire growth
SA Dayeh, ST Picraux
Nano letters 10 (10), 4032-4039, 2010
1372010
Influence of surface states on the extraction of transport parameters from InAs nanowire field effect transistors
SA Dayeh, C Soci, PKL Yu, ET Yu, D Wang
Applied Physics Letters 90 (16), 162112, 2007
1212007
Growth, defect formation, and morphology control of germanium–silicon semiconductor nanowire heterostructures
SA Dayeh, J Wang, N Li, JY Huang, AV Gin, ST Picraux
Nano letters 11 (10), 4200-4206, 2011
1122011
Heteroepitaxial growth of vertical GaAs nanowires on Si (111) substrates by metal− organic chemical vapor deposition
XY Bao, C Soci, D Susac, J Bratvold, DPR Aplin, W Wei, CY Chen, ...
Nano letters 8 (11), 3755-3760, 2008
1082008
Micromachined infrared bolometers on flexible polyimide substrates
SA Dayeh, DP Butler, Z Celik-Butler
Sensors and Actuators A: Physical 118 (1), 49-56, 2005
1072005
Direct observation of ballistic and drift carrier transport regimes in InAs nanowires
X Zhou, SA Dayeh, D Aplin, D Wang, ET Yu
Applied Physics Letters 89 (5), 053113, 2006
982006
Surface diffusion and substrate− nanowire adatom exchange in InAs nanowire growth
SA Dayeh, ET Yu, D Wang
Nano letters 9 (5), 1967-1972, 2009
952009
Electron transport in indium arsenide nanowires
SA Dayeh
Semiconductor Science and Technology 25 (2), 024004, 2010
942010
Transport properties of InAs nanowire field effect transistors: The effects of surface states
SA Dayeh, C Soci, PKL Yu, ET Yu, D Wang
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
912007
Structural and Room‐Temperature Transport Properties of Zinc Blende and Wurtzite InAs Nanowires
SA Dayeh, D Susac, KL Kavanagh, ET Yu, D Wang
Advanced Functional Materials 19 (13), 2102-2108, 2009
872009
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Articles 1–20