| Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD” E Ahvenniemi, AR Akbashev, S Ali, M Bechelany, M Berdova, S Boyadjiev, ... Journal of Vacuum Science & Technology A 35 (1), 2017 | 114 | 2017 |
| Speeding up the unique assets of atomic layer deposition D Munoz-Rojas, T Maindron, A Esteve, F Piallat, JCS Kools, JM Decams Materials Today Chemistry 12, 96-120, 2019 | 90 | 2019 |
| Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias L Djomeni, T Mourier, S Minoret, S Fadloun, F Piallat, S Burgess, A Price, ... Microelectronic Engineering 120, 127-132, 2014 | 40 | 2014 |
| Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V F Piallat, V Beugin, R Gassilloud, L Dussault, B Pelissier, C Leroux, ... Applied surface science 303, 388-392, 2014 | 27 | 2014 |
| Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break F Piallat, R Gassilloud, P Caubet, C Vallée Journal of Vacuum Science & Technology A 34 (5), 2016 | 20 | 2016 |
| Evaluation of plasma parameters on PEALD deposited TaCN F Piallat, V Beugin, R Gassilloud, P Michallon, L Dussault, B Pelissier, ... Microelectronic engineering 107, 156-160, 2013 | 14 | 2013 |
| PECVD RF versus dual frequency: an investigation of plasma influence on metal–organic precursors' decomposition and material characteristics F Piallat, C Vallée, R Gassilloud, P Michallon, B Pélissier, P Caubet Journal of Physics D: Applied Physics 47 (18), 185201, 2014 | 10 | 2014 |
| At the edge between metal organic chemical vapor deposition and atomic layer deposition: Fast Atomic Sequential Technique, for high throughput conformal deposition F Piallat, J Vitiello Journal of Vacuum Science & Technology B 34 (2), 2016 | 8 | 2016 |
| Alternative deposition solution for cost reduction of TSV integration J Vitiello, F Piallat, L Bonnet International Symposium on Microelectronics 2017 (1), 000135-000139, 2017 | 5 | 2017 |
| A study of nitrogen behavior in the formation of Ta/TaN and Ti/TaN alloyed metal electrodes on SiO2 and HfO2 dielectrics R Gassilloud, C Maunoury, C Leroux, F Piallat, B Saidi, F Martin, ... Applied Physics Letters 104 (14), 2014 | 5 | 2014 |
| Study of the molecular contaminants deposition on Cr, MoSi and SiO [sub] 2 [/sub] surfaces representative of photomasks layers H Fontaine, S Cetre, G Demenet, F Piallat 26th European Mask and Lithography Conference 7545, 167-178, 2010 | 4 | 2010 |
| Plasma assisted chemical deposi-tion (CVD/ALD) and integration of Ti (Al) N and Ta (Al) N for sub-20 nm metal gate F Piallat Université de Grenoble, 2014 | 3 | 2014 |
| Materials Today Chemistry D Muñoz-Rojas, T Maindron, A Esteve, F Piallat, JCS Kools, JM Decams Materials Today 12, 96e120, 2019 | 1 | 2019 |
| Method for producing aluminuim oxide and/or nitride J Vitiello, JL Delcarri, F Piallat US Patent App. 15/775,984, 2018 | 1 | 2018 |
| Recherche avancée HAL SHS | | 2022 |
| Method for depositing an insulating material into a via J Vitiello, F Piallat US Patent 11,189,486, 2021 | | 2021 |
| Method for producing an interconnection comprising a via extending through a substrate J Vitiello, F Piallat US Patent 11,114,340, 2021 | | 2021 |
| Method for removing a metal deposit arranged on a surface in a chamber J Vitiello, F Piallat US Patent 10,767,257, 2020 | | 2020 |
| Procede de formation d'oxyde et/ou de nitrure d'aluminium J VITIELLO, JL Delcarri, F PIALLAT | | 2019 |
| Method for removing a metal deposit placed on a surface in a chamber J Vitiello, JL Delcarri, F Piallat US Patent 10,246,781, 2019 | | 2019 |
Christophe ValleeProfesseur CNSE Albany / Professeur UGAVerified email at albany.edu
