Alok Ranjan
Title
Cited by
Cited by
Year
Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films
A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ...
Scientific Reports 8 (1), 2018
342018
Random telegraph noise in 2D hexagonal boron nitride dielectric films
A Ranjan, FM Puglisi, N Raghavan, SJ O'Shea, K Shubhakar, P Pavan, ...
Applied Physics Letters 112 (13), 133505, 2018
212018
Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM
A Ranjan, N Raghavan, J Molina, SJ O'Shea, K Shubhakar, KL Pey
Microelectronics Reliability 64, 172-178, 2016
182016
Sb2Te3 and Its Superlattices: Optimization by Statistical Design
JK Behera, X Zhou, A Ranjan, RE Simpson
ACS applied materials & interfaces 10 (17), 15040-15050, 2018
172018
CAFM based Spectroscopy of Stress-Induced Defects in HfO2 with Experimental Evidence of the Clustering Model and Metastable Vacancy Defect State
AR Nagarajan Raghavan, Shubhakar Kalya, Ramesh Thamankar, Joel Molina, Sean ...
2016 IEEE International Reliability Physics Symposium (IRPS), 2016
122016
Mechanism of Soft and Hard Breakdown in Hexagonal Boron Nitride 2D Dielectrics
A Ranjan, N Raghavan, SJ O’Shea, S Mei, M Bosman, K Shubhakar, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 2018
112018
Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics
A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ...
92019
Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight
K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ...
Microelectronics Reliability 64, 204-209, 2016
82016
Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi …
R Thamankar, FM Puglisi, A Ranjan, N Raghavan, K Shubhakar, J Molina, ...
Journal of Applied Physics 122 (2), 024301, 2017
72017
Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature
J Molina, R Torres, A Ranjan, KL Pey
Materials Science in Semiconductor Processing 66, 191-199, 2017
42017
The interplay between drift and electrical measurement in conduction atomic force microscopy
A Ranjan, KL Pey, SJ O'Shea
Review of Scientific Instruments 90 (7), 073701, 2019
32019
Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride — The Knowns and the Unknowns
KL Pey, A Ranjan, N Raghavan, K Shubhakar, SJ O'Shea
2019 IEEE International Reliability Physics Symposium (IRPS), 2019
22019
An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis
K Shubhakar, M Bosman, OA Neucheva, YC Loke, N Raghavan, ...
Microelectronics Reliability 55 (9-10), 1450-1455, 2015
22015
Localized Random Telegraphic Noise Study in HfO2dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps
A Ranjan, K Shubhakar, N Raghavan, R Thamankar, M Bosman, ...
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis …, 2015
22015
Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films
A Ranjan, SJ O’Shea, M Bosman, J Molina, N Raghavan, KL Pey
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
12020
Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy
A Ranjan, N Raghavan, K Shubhakar, SJ O’Shea, KL Pey
Noise in Nanoscale Semiconductor Devices, 417, 2020
12020
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms
FL Aguirre, A Padovani, A Ranjan, N Raghavan, N Vega, N Müller, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2019
12019
Nanoscale investigations of soft breakdown events in few layered fluorinated graphene
A Ranjan, N Raghavan, B Liu, SJ O'Shea, K Shubhakar, CS Lai, KL Pey
2017 IEEE International Reliability Physics Symposium (IRPS), 3C-5.1-3C-5.6, 2017
12017
Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride
A Ranjan, SJ O’Shea, M Bosman, N Raghavan, KL Pey
ACS Applied Materials & Interfaces 12 (49), 55000-55010, 2020
2020
Electric field effects in chalcogenides
L Chew, W Dong, A Ranjan, JK Behera, L Lu, RE Simpson
MRS Advances 3 (57-58), 3419-3425, 2018
2018
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