|Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films|
A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ...
Scientific Reports 8 (1), 2018
|Random telegraph noise in 2D hexagonal boron nitride dielectric films|
A Ranjan, FM Puglisi, N Raghavan, SJ O'Shea, K Shubhakar, P Pavan, ...
Applied Physics Letters 112 (13), 133505, 2018
|Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM|
A Ranjan, N Raghavan, J Molina, SJ O'Shea, K Shubhakar, KL Pey
Microelectronics Reliability 64, 172-178, 2016
|Sb2Te3 and Its Superlattices: Optimization by Statistical Design|
JK Behera, X Zhou, A Ranjan, RE Simpson
ACS applied materials & interfaces 10 (17), 15040-15050, 2018
|CAFM based Spectroscopy of Stress-Induced Defects in HfO2 with Experimental Evidence of the Clustering Model and Metastable Vacancy Defect State|
AR Nagarajan Raghavan, Shubhakar Kalya, Ramesh Thamankar, Joel Molina, Sean ...
2016 IEEE International Reliability Physics Symposium (IRPS), 2016
|Mechanism of Soft and Hard Breakdown in Hexagonal Boron Nitride 2D Dielectrics|
A Ranjan, N Raghavan, SJ O’Shea, S Mei, M Bosman, K Shubhakar, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 2018
|Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics|
A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ...
|Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight|
K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ...
Microelectronics Reliability 64, 204-209, 2016
|Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi …|
R Thamankar, FM Puglisi, A Ranjan, N Raghavan, K Shubhakar, J Molina, ...
Journal of Applied Physics 122 (2), 024301, 2017
|Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature|
J Molina, R Torres, A Ranjan, KL Pey
Materials Science in Semiconductor Processing 66, 191-199, 2017
|The interplay between drift and electrical measurement in conduction atomic force microscopy|
A Ranjan, KL Pey, SJ O'Shea
Review of Scientific Instruments 90 (7), 073701, 2019
|Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride — The Knowns and the Unknowns|
KL Pey, A Ranjan, N Raghavan, K Shubhakar, SJ O'Shea
2019 IEEE International Reliability Physics Symposium (IRPS), 2019
|An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis|
K Shubhakar, M Bosman, OA Neucheva, YC Loke, N Raghavan, ...
Microelectronics Reliability 55 (9-10), 1450-1455, 2015
|Localized Random Telegraphic Noise Study in HfO2dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps|
A Ranjan, K Shubhakar, N Raghavan, R Thamankar, M Bosman, ...
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis …, 2015
|Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films|
A Ranjan, SJ O’Shea, M Bosman, J Molina, N Raghavan, KL Pey
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
|Random Telegraph Noise Nano-spectroscopy in High-κ Dielectrics Using Scanning Probe Microscopy|
A Ranjan, N Raghavan, K Shubhakar, SJ O’Shea, KL Pey
Noise in Nanoscale Semiconductor Devices, 417, 2020
|Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms|
FL Aguirre, A Padovani, A Ranjan, N Raghavan, N Vega, N Müller, ...
2019 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2019
|Nanoscale investigations of soft breakdown events in few layered fluorinated graphene|
A Ranjan, N Raghavan, B Liu, SJ O'Shea, K Shubhakar, CS Lai, KL Pey
2017 IEEE International Reliability Physics Symposium (IRPS), 3C-5.1-3C-5.6, 2017
|Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride|
A Ranjan, SJ O’Shea, M Bosman, N Raghavan, KL Pey
ACS Applied Materials & Interfaces 12 (49), 55000-55010, 2020
|Electric field effects in chalcogenides|
L Chew, W Dong, A Ranjan, JK Behera, L Lu, RE Simpson
MRS Advances 3 (57-58), 3419-3425, 2018