Pedram Khalili
Pedram Khalili
Associate Professor at Northwestern University
Verified email at northwestern.edu - Homepage
Title
Cited by
Cited by
Year
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
G Yu, P Upadhyaya, Y Fan, JG Alzate, W Jiang, KL Wong, S Takei, ...
Nature nanotechnology 9 (7), 548, 2014
4912014
Low-power non-volatile spintronic memory: STT-RAM and beyond
KL Wang, JG Alzate, PK Amiri
Journal of Physics D: Applied Physics 46 (7), 074003, 2013
4172013
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
J Zhu, JA Katine, GE Rowlands, YJ Chen, Z Duan, JG Alzate, ...
Physical review letters 108 (19), 197203, 2012
2362012
Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions
P Khalili Amiri, ZM Zeng, J Langer, H Zhao, G Rowlands, YJ Chen, ...
Applied Physics Letters 98 (11), 112507, 2011
1902011
Room-temperature creation and spin–orbit torque manipulation of skyrmions in thin films with engineered asymmetry
G Yu, P Upadhyaya, X Li, W Li, SK Kim, Y Fan, KL Wong, Y Tserkovnyak, ...
Nano letters 16 (3), 1981-1988, 2016
1882016
Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ...
Scientific reports 3, 1426, 2013
1852013
Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices
T Wu, A Bur, K Wong, P Zhao, CS Lynch, PK Amiri, KL Wang, GP Carman
Applied Physics Letters 98 (26), 262504, 2011
1572011
Electric-field-induced spin wave generation using multiferroic magnetoelectric cells
S Cherepov, P Khalili Amiri, JG Alzate, K Wong, M Lewis, P Upadhyaya, ...
Applied Physics Letters 104 (8), 082403, 2014
1492014
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
H Zhao, A Lyle, Y Zhang, PK Amiri, G Rowlands, Z Zeng, J Katine, H Jiang, ...
Journal of Applied Physics 109 (7), 07C720, 2011
1402011
Room-temperature skyrmion shift device for memory application
G Yu, P Upadhyaya, Q Shao, H Wu, G Yin, X Li, C He, W Jiang, X Han, ...
Nano letters 17 (1), 261-268, 2017
1272017
Strong Rashba-Edelstein effect-induced spin–orbit torques in monolayer transition metal dichalcogenide/ferromagnet bilayers
Q Shao, G Yu, YW Lan, Y Shi, MY Li, C Zheng, X Zhu, LJ Li, PK Amiri, ...
Nano letters 16 (12), 7514-7520, 2016
1262016
Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
C Grezes, F Ebrahimi, JG Alzate, X Cai, JA Katine, J Langer, B Ocker, ...
Applied Physics Letters 108 (1), 012403, 2016
1252016
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
Z Zeng, PK Amiri, IN Krivorotov, H Zhao, G Finocchio, JP Wang, JA Katine, ...
ACS nano 6 (7), 6115-6121, 2012
1252012
Voltage-controlled magnetic anisotropy in spintronic devices
PK Amiri, KL Wang
Spin 2 (03), 1240002, 2012
1162012
Magnetization switching through spin-Hall-effect-induced chiral domain wall propagation
G Yu, P Upadhyaya, KL Wong, W Jiang, JG Alzate, J Tang, PK Amiri, ...
Physical Review B 89 (10), 104421, 2014
1112014
Giant spin-torque diode sensitivity in the absence of bias magnetic field
B Fang, M Carpentieri, X Hao, H Jiang, JA Katine, IN Krivorotov, B Ocker, ...
Nature communications 7 (1), 1-7, 2016
1052016
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
GE Rowlands, T Rahman, JA Katine, J Langer, A Lyle, H Zhao, JG Alzate, ...
Applied Physics Letters 98 (10), 102509, 2011
1002011
Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO| CoFeB| Ta magnetic tunnel junctions
JG Alzate, P Khalili Amiri, G Yu, P Upadhyaya, JA Katine, J Langer, ...
Applied physics letters 104 (11), 112410, 2014
992014
Electric-field-controlled magnetoelectric RAM: progress, challenges, and scaling
PK Amiri, JG Alzate, XQ Cai, F Ebrahimi, Q Hu, K Wong, C Grèzes, H Lee, ...
IEEE Transactions on Magnetics 51 (11), 1-7, 2015
982015
Voltage-controlled magnetic memory element with canted magnetization
KL Wang, PK Amiri, JG Alzate
US Patent 9,036,407, 2015
972015
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Articles 1–20