Jean-Christophe Harmand
Jean-Christophe Harmand
Unknown affiliation
Verified email at c2n.upsaclay.fr
Title
Cited by
Cited by
Year
Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
F Glas, JC Harmand, G Patriarche
Physical review letters 99 (14), 146101, 2007
8402007
Growth kinetics and crystal structure of semiconductor nanowires
VG Dubrovskii, NV Sibirev, JC Harmand, F Glas
Physical Review B 78 (23), 235301, 2008
3602008
Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth
JC Harmand, G Patriarche, N Péré-Laperne, MN Merat-Combes, ...
Applied Physics Letters 87 (20), 203101, 2005
3322005
Crystal phase quantum dots
N Akopian, G Patriarche, L Liu, JC Harmand, V Zwiller
Nano letters 10 (4), 1198-1201, 2010
2612010
Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy
VG Dubrovskii, NV Sibirev, GE Cirlin, JC Harmand, VM Ustinov
Physical Review E 73 (2), 021603, 2006
2362006
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ...
Journal of Applied Physics 102 (9), 094313, 2007
1722007
Predictive modeling of self-catalyzed III-V nanowire growth
F Glas, MR Ramdani, G Patriarche, JC Harmand
Physical Review B 88 (19), 195304, 2013
1712013
New mode of vapor− liquid− solid nanowire growth
VG Dubrovskii, GE Cirlin, NV Sibirev, F Jabeen, JC Harmand, P Werner
Nano letters 11 (3), 1247-1253, 2011
1612011
Growth and characterization of InP nanowires with InAsP insertions
M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ...
Nano letters 7 (6), 1500-1504, 2007
1572007
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
1542007
Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates
GE Cirlin, VG Dubrovskii, IP Soshnikov, NV Sibirev, YB Samsonenko, ...
physica status solidi (RRL)–Rapid Research Letters 3 (4), 112-114, 2009
1532009
Arsenic pathways in self-catalyzed growth of GaAs nanowires
MR Ramdani, JC Harmand, F Glas, G Patriarche, L Travers
Crystal Growth & Design 13 (1), 91-96, 2013
1502013
Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
R Teissier, D Sicault, JC Harmand, G Ungaro, G Le Roux, L Largeau
Journal of Applied Physics 89 (10), 5473-5477, 2001
1452001
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
M Tchernycheva, JC Harmand, G Patriarche, L Travers, GE Cirlin
Nanotechnology 17 (16), 4025, 2006
1362006
Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
JC Harmand, G Ungaro, L Largeau, G Le Roux
Applied Physics Letters 77 (16), 2482-2484, 2000
1362000
Nucleation antibunching in catalyst-assisted nanowire growth
F Glas, JC Harmand, G Patriarche
Physical review letters 104 (13), 135501, 2010
1252010
GaAsSbN: a new low-bandgap material for GaAs substrates
G Ungaro, G Le Roux, R Teissier, JC Harmand
Electronics Letters 35 (15), 1246-1248, 1999
1201999
GaNAsSb: How does it compare with other dilute III–V-nitride alloys?
JC Harmand, A Caliman, EVK Rao, L Largeau, J Ramos, R Teissier, ...
Semiconductor science and technology 17 (8), 778, 2002
1152002
Role of nonlinear effects in nanowire growth and crystal phase
VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ...
Physical Review B 80 (20), 205305, 2009
1102009
Facet and in-plane crystallographic orientations of GaN nanowires grown on Si (111)
L Largeau, DL Dheeraj, M Tchernycheva, GE Cirlin, JC Harmand
Nanotechnology 19 (15), 155704, 2008
1042008
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