Jean-Christophe Harmand
Jean-Christophe Harmand
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Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
F Glas, JC Harmand, G Patriarche
Physical review letters 99 (14), 146101, 2007
Growth kinetics and crystal structure of semiconductor nanowires
VG Dubrovskii, NV Sibirev, JC Harmand, F Glas
Physical Review B 78 (23), 235301, 2008
Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth
JC Harmand, G Patriarche, N Péré-Laperne, MN Merat-Combes, ...
Applied Physics Letters 87 (20), 203101, 2005
Crystal phase quantum dots
N Akopian, G Patriarche, L Liu, JC Harmand, V Zwiller
Nano letters 10 (4), 1198-1201, 2010
Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy
VG Dubrovskii, NV Sibirev, GE Cirlin, JC Harmand, VM Ustinov
Physical Review E 73 (2), 021603, 2006
Predictive modeling of self-catalyzed III-V nanowire growth
F Glas, MR Ramdani, G Patriarche, JC Harmand
Physical Review B 88 (19), 195304, 2013
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ...
Journal of Applied Physics 102 (9), 094313, 2007
New mode of vapor− liquid− solid nanowire growth
VG Dubrovskii, GE Cirlin, NV Sibirev, F Jabeen, JC Harmand, P Werner
Nano letters 11 (3), 1247-1253, 2011
Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates
GE Cirlin, VG Dubrovskii, IP Soshnikov, NV Sibirev, YB Samsonenko, ...
physica status solidi (RRL)–Rapid Research Letters 3 (4), 112-114, 2009
Growth and characterization of InP nanowires with InAsP insertions
M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ...
Nano letters 7 (6), 1500-1504, 2007
Arsenic pathways in self-catalyzed growth of GaAs nanowires
MR Ramdani, JC Harmand, F Glas, G Patriarche, L Travers
Crystal Growth & Design 13 (1), 91-96, 2013
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
R Teissier, D Sicault, JC Harmand, G Ungaro, G Le Roux, L Largeau
Journal of Applied Physics 89 (10), 5473-5477, 2001
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
M Tchernycheva, JC Harmand, G Patriarche, L Travers, GE Cirlin
Nanotechnology 17 (16), 4025, 2006
Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
JC Harmand, G Ungaro, L Largeau, G Le Roux
Applied Physics Letters 77 (16), 2482-2484, 2000
Nucleation antibunching in catalyst-assisted nanowire growth
F Glas, JC Harmand, G Patriarche
Physical review letters 104 (13), 135501, 2010
Atomic step flow on a nanofacet
JC Harmand, G Patriarche, F Glas, F Panciera, I Florea, JL Maurice, ...
Physical review letters 121 (16), 166101, 2018
GaNAsSb: How does it compare with other dilute III–V-nitride alloys?
JC Harmand, A Caliman, EVK Rao, L Largeau, J Ramos, R Teissier, ...
Semiconductor science and technology 17 (8), 778, 2002
GaAsSbN: a new low-bandgap material for GaAs substrates
G Ungaro, G Le Roux, R Teissier, JC Harmand
Electronics Letters 35 (15), 1246-1248, 1999
Role of nonlinear effects in nanowire growth and crystal phase
VG Dubrovskii, NV Sibirev, GE Cirlin, AD Bouravleuv, YB Samsonenko, ...
Physical Review B 80 (20), 205305, 2009
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