Sergey Blokhin
Sergey Blokhin
Ioffe Physico-Technical Institute RAS
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Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
SA Blokhin, JA Lott, A Mutig, G Fiol, NN Ledentsov, MV Maximov, ...
Electronics Letters 45 (10), 1, 2009
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs
SA Blokhin, AV Sakharov, AM Nadtochy, AS Pauysov, MV Maximov, ...
Semiconductors 43, 514-518, 2009
High speed high temperature stable 980 nm VCSELs operating error-free at 25 Gbit/s up to 85░ C for short reach optical interconnects
A Mutig, W Hofmann, SA Blokhin, P Wolf, P Moser, AM Nadtochiy, ...
Optical Fiber Communication Conference, OTuQ3, 2011
Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers
A Mutig, SA Blokhin, AM Nadtochiy, G Fiol, JA Lott, VA Shchukin, ...
Applied Physics Letters 95 (13), 2009
6-mW single-mode high-speed 1550-nm wafer-fused VCSELs for DWDM application
AYE A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. G. Gladyshev, S. A ...
IEEE Journal of Quantum Electronics 53 (6), 2400808, 2017
Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
SA Blokhin, NA Maleev, AG Kuzmenkov, AV Sakharov, MM Kulagina, ...
IEEE journal of quantum electronics 42 (9), 851-858, 2006
Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects
JA Lott, AS Payusov, SA Blokhin, P Moser, NN Ledentsov, D Bimberg
physica status solidi c 9 (2), 290-293, 2012
Metamorphic growth for application in long-wavelength (1.3–1.55 Ám) lasers and MODFET-type structures on GaAs substrates
ES Semenova, AE Zhukov, SS Mikhrin, AY Egorov, VA Odnoblyudov, ...
Nanotechnology 15 (4), S283, 2004
Highly temperature-stable modulation characteristics of multioxide-aperture high-speed 980 nm vertical cavity surface emitting lasers
A Mutig, JA Lott, SA Blokhin, P Wolf, P Moser, W Hofmann, AM Nadtochiy, ...
Applied Physics Letters 97 (15), 2010
High-spatial-resolution near-field photoluminescence and imaging of whispering-gallery modes in semiconductor microdisks with embedded quantum dots
AM Mintairov, Y Chu, Y He, S Blokhin, A Nadtochy, M Maximov, ...
Physical Review B 77 (19), 195322, 2008
Reliability performance of 25 Gbit s− 1 850 nm vertical-cavity surface-emitting lasers
LY Karachinsky, SA Blokhin, II Novikov, NA Maleev, AG Kuzmenkov, ...
Semiconductor science and technology 28 (6), 065010, 2013
Progress on single mode VCSELs for data-and tele-communications
NN Ledentsov, JA Lott, JR Kropp, VA Shchukin, D Bimberg, P Moser, ...
Vertical-Cavity Surface-Emitting Lasers XVI 8276, 160-170, 2012
20 Gbit/s error free transmission with~ 850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions
JA Lott, VA Shchukin, NN Ledentsov, A Stinz, F Hopfer, A Mutig, G Fiol, ...
Physics and Simulation of Optoelectronic Devices XVII 7211, 268-279, 2009
High power single mode 1300-nm superlattice based VCSEL: Impact of the buried tunnel junction diameter on performance
SA Blokhin, AV Babichev, AG Gladyshev, LY Karachinsky, II Novikov, ...
IEEE Journal of Quantum Electronics 58 (2), 1-15, 2022
Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots
NV Kryzhanovskaya, EI Moiseev, FI Zubov, AM Mozharov, MV Maximov, ...
Photonics Research 7 (6), 664-668, 2019
Wafer‐fused 1300 nm VCSELs with an active region based on superlattice
S Blokhin, A Babichev, A Gladyshev, L Karachinsky, I Novikov, A Blokhin, ...
Electronics Letters 57 (18), 697-698, 2021
Evaluation of energy-to-data ratio of quantum-dot microdisk lasers under direct modulation
NV Kryzhanovskaya, EI Moiseev, FI Zubov, AM Mozharov, MV Maximov, ...
Journal of Applied Physics 126 (6), 2019
Modulation characteristics of high-speed and high-temperature stable 980 nm range VCSELs operating error free at 25 Gbit/s up to 85░ C
A Mutig, JA Lott, SA Blokhin, P Moser, P Wolf, W Hofmann, AM Nadtochiy, ...
IEEE Journal of Selected Topics in Quantum Electronics 17 (6), 1568-1575, 2011
Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR
NA Maleev, AG Kuz’menkov, MM Kulagina, YM Zadiranov, AP Vasil’ev, ...
Semiconductors 47, 993-996, 2013
Monolithic electro‐optically modulated vertical cavity surface emitting laser with 10 Gb/s open‐eye operation
TD Germann, A Strittmatter, A Mutig, AM Nadtochiy, JA Lott, SA Blokhin, ...
physica status solidi c 7 (10), 2552-2554, 2010
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