Jihyun Kim
Jihyun Kim
Verified email at korea.ac.kr
Cited by
Cited by
Wide band gap ferromagnetic semiconductors and oxides
SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary IV, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 011301, 2018
Magnetic properties of n-GaMnN thin films
GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
Graphene-based nitrogen dioxide gas sensors
G Ko, HY Kim, J Ahn, YM Park, KY Lee, J Kim
Current Applied Physics 10 (4), 1002-1004, 2010
Solid-State Electron
B Luo, R Mehandru, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
Perspective—Opportunities and Future Directions for Ga2O3
MA Mastro, A Kuramata, J Calkins, J Kim, F Ren, SJ Pearton
ECS Journal of Solid State Science and Technology 6 (5), P356-P359, 2017
Review of radiation damage in GaN-based materials and devices
SJ Pearton, R Deist, F Ren, L Liu, AY Polyakov, J Kim
Journal of Vacuum Science & Technology A 31 (5), 050801, 2013
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation
R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82, 2530, 2003
MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors
Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
Characteristics of MgO/GaN gate-controlled metal-oxide-semiconductor diodes
J Kim, R Mehandru, B Luo, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 80 (24), 4555-4557, 2002
Radiation effects in GaN materials and devices
AY Polyakov, SJ Pearton, P Frenzer, F Ren, L Liu, J Kim
Journal of Materials Chemistry C 1 (5), 877-887, 2013
Flexible graphene-based chemical sensors on paper substrates
G Yang, C Lee, J Kim, F Ren, SJ Pearton
Physical Chemistry Chemical Physics 15 (6), 1798-1801, 2013
Gadolinium oxide and scandium oxide: gate dielectrics for GaN MOSFETs
BP Gila, JW Johnson, R Mehandru, B Luo, AH Onstine, V Krishnamoorthy, ...
physica status solidi (a) 188 (1), 239-242, 2001
Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
BJ Kim, C Lee, Y Jung, KH Baik, MA Mastro, JK Hite, CR Eddy Jr, J Kim
Applied Physics Letters 99 (14), 143101, 2011
High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
J Yang, S Ahn, F Ren, SJ Pearton, S Jang, J Kim, A Kuramata
Applied Physics Letters 110 (19), 192101, 2017
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 220901, 2018
Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors
BS Kang, S Kim, J Kim, F Ren, K Baik, SJ Pearton, BP Gila, CR Abernathy, ...
Proceedings-Electrochemical Society, 292-297, 2003
Exfoliated β-Ga 2 O 3 nano-belt field-effect transistors for air-stable high power and high temperature electronics
J Kim, S Oh, MA Mastro, J Kim
Physical Chemistry Chemical Physics 18 (23), 15760-15764, 2016
Inversion behavior in Sc2O3/GaN gated diodes
J Kim, R Mehandru, B Luo, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 81, 373-375, 2002
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