Martin Burkhardt
Martin Burkhardt
IBM Research
Verified email at us.ibm.com
Title
Cited by
Cited by
Year
22 nm technology compatible fully functional 0.1 μm26T-SRAM cell
BS Haran, A Kumar, L Adam, J Chang, V Basker, S Kanakasabapathy, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
882008
Integration of EUV lithography in the fabrication of 22-nm node devices
O Wood, CS Koay, K Petrillo, H Mizuno, S Raghunathan, J Arnold, ...
Alternative Lithographic Technologies 7271, 727104, 2009
712009
Experimental result and simulation analysis for the use of pixelated illumination from source mask optimization for 22nm logic lithography process
K Lai, AE Rosenbluth, S Bagheri, J Hoffnagle, K Tian, D Melville, ...
Optical Microlithography XXII 7274, 72740A, 2009
682009
X-ray nanolithography: Extension to the limits of the lithographic process
HI Smith, ML Schattenburg, SD Hector, J Ferrera, EE Moon, IY Yang, ...
Microelectronic Engineering 32 (1-4), 143-158, 1996
611996
Illuminator design for the printing of regular contact patterns
M Burkhardt, A Yen, C Progler, G Wells
Microelectronic engineering 41, 91-95, 1998
591998
Impact of resist blur on MEF, OPC, and CD control
TA Brunner, C Fonseca, N Seong, M Burkhardt
Optical Microlithography XVII 5377, 141-149, 2004
582004
Impact of resist blur on MEF, OPC, and CD control
TA Brunner, C Fonseca, N Seong, M Burkhardt
Optical Microlithography XVII 5377, 141-149, 2004
582004
Insertion strategy for EUV lithography
O Wood, J Arnold, T Brunner, M Burkhardt, JHC Chen, D Civay, SSC Fan, ...
Extreme Ultraviolet (EUV) Lithography III 8322, 832203, 2012
402012
EUV patterning successes and frontiers
N Felix, D Corliss, K Petrillo, N Saulnier, Y Xu, L Meli, H Tang, A De Silva, ...
Extreme Ultraviolet (EUV) Lithography VII 9776, 97761O, 2016
352016
Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond)
G Landie, Y Xu, S Burns, K Yoshimoto, M Burkhardt, L Zhuang, K Petrillo, ...
Advances in Resist Materials and Processing Technology XXVIII 7972, 797206, 2011
342011
Pitch-based subresolution assist feature design
LW Liebmann, AH Gabor, RL Gordon, CA Fonseca, M Burkhardt
US Patent 6,964,032, 2005
322005
Best focus shift mechanism for thick masks
M Burkhardt, A Raghunathan
Extreme Ultraviolet (EUV) Lithography VI 9422, 94220X, 2015
302015
EUV lithography at the 22nm technology node
O Wood, CS Koay, K Petrillo, H Mizuno, S Raghunathan, J Arnold, ...
Extreme Ultraviolet (EUV) Lithography 7636, 76361M, 2010
302010
Modeling and experiments of non-telecentric thick mask effects for EUV lithography
G McIntyre, C Koay, M Burkhardt, H Mizuno, OR Wood II
Alternative Lithographic Technologies 7271, 72711C, 2009
302009
Soluble MHC complexes and methods of use thereof
PR Rhode, J Acevedo, M Burkhardt, JA Jiao, HC Wong
US Patent 7,074,905, 2006
252006
32 nm logic patterning options with immersion lithography
K Lai, S Burns, S Halle, L Zhuang, M Colburn, S Allen, C Babcock, ...
Optical Microlithography XXI 6924, 69243C, 2008
242008
Patterning and characterization of large‐area quantum wire arrays
K Ismail, M Burkhardt, HI Smith, NH Karam, PA Sekula‐Moise
Applied physics letters 58 (14), 1539-1541, 1991
231991
Trilayer development for 193 nm immersion lithography
S Burns, M Burkhardt, D Goldfarb, N Lustig, D Pfeiffer, MJ Brodsky, ...
Journal of Photopolymer Science and Technology 20 (5), 679-686, 2007
222007
Method and apparatus for amplitude filtering in the frequency plane of a lithographic projection system
S Butt, M Burkhardt
US Patent 6,940,583, 2005
222005
Resonant magnetoconductance in a two-dimensional lateral-surface superlattice
A Toriumi, K Ismail, M Burkhardt, DA Antoniadis, HI Smith
Physical Review B 41 (17), 12346, 1990
211990
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Articles 1–20