Coating geometries of metals on single-walled carbon nanotubes Y He, J Zhang, Y Wang, Z Yu Applied Physics Letters 96 (6), 2010 | 50 | 2010 |
Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors J Kang, Y He, J Zhang, X Yu, X Guan, Z Yu Applied Physics Letters 96 (25), 2010 | 40 | 2010 |
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping Y Tan, M Povolotskyi, T Kubis, Y He, Z Jiang, G Klimeck, TB Boykin Journal of Computational Electronics 12, 56-60, 2013 | 39 | 2013 |
Schottky barrier formation at metal electrodes and semiconducting carbon nanotubes Y He, J Zhang, S Hou, Y Wang, Z Yu Applied Physics Letters 94 (9), 2009 | 37 | 2009 |
Molecular dynamics study of the switching mechanism of carbon-based resistive memory Y He, J Zhang, X Guan, L Zhao, Y Wang, H Qian, Z Yu IEEE Transactions on Electron Devices 57 (12), 3434-3441, 2010 | 34 | 2010 |
Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in-Based Unipolar Resistive Memory L Zhao, J Zhang, Y He, X Guan, H Qian, Z Yu IEEE electron device letters 32 (5), 677-679, 2011 | 27 | 2011 |
Low rank approximation method for efficient Green's function calculation of dissipative quantum transport L Zeng, Y He, M Povolotskyi, XY Liu, G Klimeck, T Kubis Journal of Applied Physics 113 (21), 2013 | 23 | 2013 |
Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool J Sellier, J Fonseca, TC Kubis, M Povolotskyi, Y He, H Ilatikhameneh, ... Proc. SISPAD, 1-4, 2012 | 23 | 2012 |
Quantum transport in AlGaSb/InAs TFETs with gate field in-line with tunneling direction Z Jiang, Y Lu, Y Tan, Y He, M Povolotskyi, T Kubis, AC Seabaugh, P Fay, ... IEEE Transactions on Electron Devices 62 (8), 2445-2449, 2015 | 16 | 2015 |
Surface Passivation in Empirical Tight Binding Yu He, Yaohua Tan, Zhengping Jiang, Michael Povolotskyi, Gerhard Klimeck ... IEEE Transactions on Electron Devices 63 (3), 954-958, 2016 | 14 | 2016 |
Non-equilibrium Green's functions method: Non-trivial and disordered leads Y He, Y Wang, G Klimeck, T Kubis Applied Physics Letters 105 (21), 2014 | 13 | 2014 |
Quantum transport in NEMO5: Algorithm improvements and high performance implementation Y He, T Kubis, M Povolotskyi, J Fonseca, G Klimeck 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 13 | 2014 |
Schottky Barrier Formation at a Carbon Nanotube-Scandium Junction Y HE, M ZHANG, JY ZHANG, Y WANG, ZP YU Chinese Physics Letters 26 (2), 27302, 2009 | 12 | 2009 |
Simulation study of switching mechanism in carbon-based resistive memory with molecular dynamics and extended Hückel theory-based NEGF method X Guan, Y He, L Zhao, J Zhang, Y Wang, H Qian, Z Yu 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 7 | 2009 |
NEMO5: Predicting MoS2 heterojunctions KC Wang, D Valencia, J Charles, Y He, M Povolotskyi, G Klimeck, ... 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 6 | 2016 |
General retarded contact self-energies in and beyond the non-equilibrium green's functions method T Kubis, Y He, R Andrawis, G Klimeck Journal of Physics: Conference Series 696 (1), 012019, 2016 | 6 | 2016 |
Tight binding parameters by dft mapping Y Tan, M Povolotskyi, TC Kubis, Y He, Z Jiang, T Boykin, G Klimeck Accessed on Apr, 2016 | 6 | 2016 |
Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark Z Jiang, Y He, G Zhou, T Kubis, HG Xing, G Klimeck 71st Device Research Conference, 145-146, 2013 | 5 | 2013 |
TCAD modeling of neuromorphic systems based on ferroelectric tunnel junctions Y He, WC Ng, L Smith Journal of Computational Electronics 19 (4), 1444-1449, 2020 | 4 | 2020 |
Quantum Transport in GaSb/InAs nanowire TFET with semiclassical charge density Z Jiang, Y He, Y Tan, M Povoloskyi, T Kubis, G Klimeck Poster 15th Int. Workshop Comput. Electron, 2012 | 4 | 2012 |