| Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors FA McGuire, YC Lin, K Price, GB Rayner, S Khandelwal, S Salahuddin, ... Nano letters 17 (8), 4801-4806, 2017 | 272 | 2017 |
| Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts Z Cheng, Y Yu, S Singh, K Price, SG Noyce, YC Lin, L Cao, AD Franklin Nano letters 19 (8), 5077-5085, 2019 | 91 | 2019 |
| Immunity to Contact Scaling in MoS2 Transistors Using in Situ Edge Contacts Z Cheng, Y Yu, S Singh, K Price, SG Noyce, YC Lin, L Cao, AD Franklin Nano letters 19 (8), 5077-5085, 2019 | 91 | 2019 |
| Realizing ferroelectric Hf0. 5Zr0. 5O2 with elemental capping layers YC Lin, F McGuire, AD Franklin Journal of Vacuum Science & Technology B 36 (1), 2018 | 56 | 2018 |
| Uniform and stable aerosol jet printing of carbon nanotube thin-film transistors by ink temperature control S Lu, J Zheng, JA Cardenas, NX Williams, YC Lin, AD Franklin ACS applied materials & interfaces 12 (38), 43083-43089, 2020 | 40 | 2020 |
| Controllable synthesis and enhanced electrocatalysis of iron-based catalysts derived from electrospun nanofibers. X Yan, L Gan, YC Lin, L Bai, T Wang, X Wang, J Luo, J Zhu Small (Weinheim an der Bergstrasse, Germany) 10 (20), 4072-4079, 2014 | 38 | 2014 |
| High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate ML Huang, SW Chang, MK Chen, Y Oniki, HC Chen, CH Lin, WC Lee, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 31 | 2016 |
| Convergent ion beam alteration of 2D materials and metal-2D interfaces Z Cheng, H Abuzaid, Y Yu, F Zhang, Y Li, SG Noyce, NX Williams, YC Lin, ... 2D Materials 6 (3), 034005, 2019 | 21 | 2019 |
| Improving text generation with student-forcing optimal transport J Li, C Li, G Wang, H Fu, Y Lin, L Chen, Y Zhang, C Tao, R Zhang, ... Proceedings of the 2020 Conference on Empirical Methods in Natural Language …, 2020 | 13 | 2020 |
| Short-channel robustness from negative capacitance in 2D NC-FETs ADF Yuh-Chen Lin, G. Bruce Rayner, Jorge Cardenas Appl. Phys. Lett. 118, 101903, 2021 | 9 | 2021 |
| Effects of gate stack composition and thickness in 2-D negative capacitance FETs YC Lin, F McGuire, S Noyce, N Williams, Z Cheng, J Andrews, ... IEEE Journal of the Electron Devices Society 7, 645-649, 2019 | 6 | 2019 |
| MoS2 negative capacitance FETs with CMOS-compatible hafnium zirconium oxide FA McGuire, YC Lin, B Rayner, AD Franklin 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 5 | 2017 |
| Two-Dimensional Negative Capacitance-FETs with Ferroelectric HfZrO2 YC Lin Duke University, 2020 | | 2020 |
| PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0030555 YC Lin, GB Rayner, J Cardenas, AD Franklin | | |
