| LiSiOX-Based Analog Memristive Synapse for Neuromorphic Computing J Chen, CY Lin, Y Li, C Qin, K Lu, JM Wang, CK Chen, YH He, TC Chang, ... IEEE Electron Device Letters 40 (4), 542-545, 2019 | 57 | 2019 |
| The demonstration of increased selectivity during experimental measurement in filament-type vanadium oxide-based selector CK Chen, CY Lin, PH Chen, TC Chang, CC Shih, YT Tseng, HX Zheng, ... IEEE Transactions on Electron Devices 65 (10), 4622-4627, 2018 | 31 | 2018 |
| Reducing forming voltage by applying bipolar incremental step pulse programming in a 1T1R structure resistance random access memory HX Zheng, TC Chang, KH Xue, YT Su, CH Wu, CC Shih, YT Tseng, ... IEEE Electron Device Letters 39 (6), 815-818, 2018 | 22 | 2018 |
| 2-kbit Array of 3-D Monolithically-stacked IGZO FETs with Low SS-64mV/dec, Ultra-low-leakage, Competitive μ-57 cm2/V-s Performance and Novel nMOS-Only … U Chand, Z Fang, C Chun-Kuei, Y Luo, H Veluri, M Sivan, LJ Feng, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 16 | 2021 |
| Stress-memorized HZO for high-performance ferroelectric field-effect memtransistor SH Tsai, Z Fang, X Wang, U Chand, CK Chen, S Hooda, M Sivan, J Pan, ... ACS Applied Electronic Materials 4 (4), 1642-1650, 2022 | 15 | 2022 |
| Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory KJ Zhou, TC Chang, CY Lin, CK Chen, YT Tseng, HX Zheng, HC Chen, ... IEEE Electron Device Letters 41 (2), 224-227, 2019 | 12 | 2019 |
| Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory CC Lin, PH Chen, MC Chen, TC Chang, CY Lin, HX Zheng, CK Chen, ... IEEE Transactions on Electron Devices 66 (6), 2595-2599, 2019 | 8 | 2019 |
| First Demonstration of Ultra-low D it Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL … CK Chen, Z Fang, S Hooda, M Lal, U Chand, Z Xu, J Pan, SH Tsai, ... 2022 International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2022 | 7 | 2022 |
| Overcoming Negative nFET VTH by Defect-Compensated Low-Thermal Budget ITO-IGZO Hetero-Oxide Channel to Achieve Record Mobility and Enhancement … S Hooda, CK Chen, M Lal, SH Tsai, E Zamburg, AVY Thean 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 6 | 2023 |
| Low-thermal-budget beol-compatible beyond-silicon transistor technologies for future monolithic-3d compute and memory applications A Thean, SH Tsai, CK Chen, M Sivan, B Tang, S Hooda, Z Fang, J Pan, ... 2022 International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2022 | 3 | 2022 |
| Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory … U Chand, MMS Aly, M Lal, C Chun-Kuei, S Hooda, SH Tsai, Z Fang, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 3 | 2022 |
| High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect CK Chen, S Hooda, Z Fang, M Lal, Z Xu, J Pan, SH Tsai, E Zamburg, ... IEEE Transactions on Electron Devices 70 (4), 2098-2105, 2023 | 2 | 2023 |
| Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C) U Chand, C Chun-Kuei, M Lal, S Hooda, H Veluri, Z Fang, SH Tsai, ... 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022 | 2 | 2022 |
| A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory CY Lin, TC Chang, CH Pan, MC Chen, YL Xu, YF Tan, PY Wu, CK Chen, ... Journal of Alloys and Compounds 817, 150566, 2020 | 2 | 2020 |
| First Demonstration of HZO-LNOI Integrated Ferroelectric Electro-Optic Modulator and Memory to Enable Reconfigurable Photonic Systems Z Xu, CK Chen, HL Lin, Y Gao, W Ke, B Xu, P Dmitriev, C Arbiz, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal … CK Chen, Z Xu, S Hooda, J Pan, E Zamburg, AVY Thean 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| A Low-Latency DNN Accelerator Enabled by DFT-Based Convolution Execution Within Crossbar Arrays H Veluri, U Chand, CK Chen, AVY Thean IEEE Transactions on Neural Networks and Learning Systems, 2023 | | 2023 |
| BEOL Compatible Extremely Scaled Bilayer ITO/IGZO Channel FET with High Mobility 106 cm2/V.s S Hooda, M Lal, C Chun-Kuei, SH Tsai, E Zamburg, AVY Thean 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2023 | | 2023 |
| Back-End-of-Line-Compatible Anneal-Free Ferroelectric Field-Effect Transistor SH Tsai, Z Li, MMME Phyu, Z Fang, S Hooda, CK Chen, E Zamburg, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | | 2023 |
| Anneal-Free HZO-Based Ferroelectric Field-Effect Transistor for Back-End-of-Line-Compatible Monolithic 3D Integration T Shih-Hao, CK Chen, W XINGHUA, U CHAND, S DEVI, E Zamburg, ... | | 2022 |
