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Ramanathan Gandhi
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Vertical Si-Nanowire-Type Tunneling FETs With Low Subthreshold Swing () at Room Temperature
R Gandhi, Z Chen, N Singh, K Banerjee, S Lee
IEEE Electron Device Letters 32 (4), 437-439, 2011
3652011
CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With-mV/decade Subthreshold Swing
R Gandhi, Z Chen, N Singh, K Banerjee, S Lee
IEEE Electron Device Letters 32 (11), 1504-1506, 2011
1992011
Vertical silicon nanowire platform for low power electronics and clean energy applications
DL Kwong, X Li, Y Sun, G Ramanathan, ZX Chen, SM Wong, Y Li, ...
Journal of Nanotechnology 2012, 2012
502012
Ferroelectric Devices and Methods of Forming Ferroelectric Devices
DVNR Ashonita A. Chavan, Ramanathan Gandhi, Beth R. Cook
US Patent 20,170,345,831, 2017
13*2017
Hydraulic transport of solids
RA Hill, PE Snock, RL Gandhi
The pump handbook. 2nd ed. New York: McGraw-Hill, 1986
61986
Vertical Nanowire Gate-All-Around p-type Tunneling Field-Effect Transistor With Si0. 8Ge0. 2/Si Heterojunction
A Soundarapandian, R Gandhi, Z Chen, X Li, NSS Lee
International Conference on Solid-tate and Integrated Circuit 32, 2012
32012
Intermediate layer thickness dependence on switching field distribution in perpendicular recording media
R Sbiaa, R Gandhi, K Srinivasan, SN Piramanayagam, RM Seoh
Journal of magnetism and magnetic materials 321 (17), 2682-2684, 2009
32009
Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices
DVN Ramaswamy, R Gandhi, SE Sills
US Patent 11,335,788, 2022
22022
Assemblies which include ruthenium-containing conductive gates
R Gandhi
US Patent 10,964,793, 2021
12021
Methods of forming a device, and related devices, memory devices, and electronic systems
SE Sills, R Gandhi, DVN Ramaswamy
US Patent App. 16/596,487, 2020
12020
Influence of SF6/N2 Gas Mixture Ratios on the Lightning Streamer Propagation Characteristics of 22 kV MV Circuit Breaker
R Gandhi, S Chandrasekar, C Nagarajan
Journal of Electrical Engineering and Technology 13 (4), 1663-1672, 2018
12018
Integrated assemblies having semiconductor oxide channel material, and methods of forming integrated assemblies
YF Lee, I Asano, R Gandhi, SE Sills
US Patent 11,329,133, 2022
2022
Elevationally-Extending Transistors, Devices Comprising Elevationally-Extending Transistors, And Methods Of Forming A Device Comprising Elevationally-Extending Transistors
SE Sills, KD Prall, DVN Ramaswamy, R Gandhi
US Patent App. 17/472,895, 2021
2021
Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies
KM Karda, YF Lee, H Liu, DVN Ramaswamy, R Gandhi, K Sarpatwari, ...
US Patent App. 17/396,049, 2021
2021
Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors
SE Sills, KD Prall, DVN Ramaswamy, R Gandhi
US Patent 11,152,509, 2021
2021
Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies
KM Karda, YF Lee, H Liu, DVN Ramaswamy, R Gandhi, K Sarpatwari, ...
US Patent 11,107,817, 2021
2021
Integrated Assemblies Having Polycrystalline First Semiconductor Material Adjacent Conductively-Doped Second Semiconductor Material
KM Karda, DC Pandey, H Liu, RJ Hill, G Huang, Y Gao, R Gandhi, ...
US Patent App. 17/317,668, 2021
2021
Assemblies Which Include Ruthenium-Containing Conductive Gates
R Gandhi
US Patent App. 17/194,971, 2021
2021
Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material
KM Karda, DC Pandey, H Liu, RJ Hill, G Huang, Y Gao, R Gandhi, ...
US Patent 11,038,027, 2021
2021
Device including a vertical transistor having a large band gap channel material and void spaces adjacent gate electrodes, and related methods and systems
KM Karda, R Gandhi, H Li, H Liu, DVN Ramaswamy, SD Tang, SE Sills
US Patent 10,998,440, 2021
2021
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