| Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ... Applied Physics Letters 103 (14), 2013 | 92 | 2013 |
| Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta Ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon Y Li, GI Ng, S Arulkumaran, CMM Kumar, KS Ang, MJ Anand, H Wang, ... Applied Physics Express 6 (11), 116501, 2013 | 48 | 2013 |
| Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack MJ Anand, GI Ng, S Vicknesh, S Arulkumaran, K Ranjan physica status solidi (c) 10 (11), 1421-1425, 2013 | 35 | 2013 |
| Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) MJ Anand, GI Ng, S Arulkumaran, M Kumar, K Ranjan, S Vicknesh, ... Applied Physics Letters 106 (8), 2015 | 28 | 2015 |
| Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress MJ Anand, GI Ng, S Arulkumaran, B Syamal, X Zhou Applied Physics Express 8 (10), 104101, 2015 | 21 | 2015 |
| Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors Y Li, GI Ng, S Arulkumaran, G Ye, CMM Kumar, MJ Anand, ZH Liu Applied Physics Express 8 (4), 041001, 2015 | 19 | 2015 |
| Low k-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage MJ Anand, GI Ng, S Arulkumaran, K Ranjan, S Vicknesh, KS Ang Japanese Journal of Applied Physics 54 (3), 036504, 2015 | 10 | 2015 |
| GaN HEMT compact model for circuit simulation B Syamal, SB Chiah, X Zhou, A Ajaykumar, MJ Anand, GI Ng, ... 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 8 | 2015 |
| Low specific ON-resistance and high figure-of-merit AlGaN/GaN HEMTs on Si substrate with non-gold metal stacks MJ Anand, GI Ng, S Arulkumaran, H Wang, Y Li, S Vicknesh, T Egawa 71st Device Research Conference, 1-2, 2013 | 6 | 2013 |
| Uniformity studies of AlGaN/GaN HEMTs on 200-mm diameter Si (111) substrate S Arulkumaran, GI Ng, S Vicknesh, CM Manojkumar, MJ Anand, H Wang, ... 2013 International Conference on Compound Semiconductor Manufacturing …, 2013 | 6 | 2013 |
| AlGaN/GaN MISHEMTs on silicon using atomic layer deposited ZrO2 as gate dielectrics G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ... 71st Device Research Conference, 71-72, 2013 | 2 | 2013 |
| This document is downloaded from DR-NTU, Nanyang Technological University Library, Singapore. MJ Anand, GI Ng, S Arulkumaran, X Zhou Applied Physics Letters 106, 083508, 2015 | | 2015 |
| This document is downloaded from DR-NTU, Nanyang Technological University Library, Singapore. S Castagne, M Taureza, X Song, S Castagne, M Taureza, X Song materials research 966 (967), 111-119, 2014 | | 2014 |
| Uniformity Studies of AlGaN/GaN HEMTs on 8-in Diameter Si (111) Substrate S Arulkumaran, GI Ng, S Vicknesh, CM Manojkumar, KS Ang, H Wang, ... | | |
