| AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit A Raman, S Dasgupta, S Rajan, JS Speck, UK Mishra Japanese Journal of Applied Physics 47 (5R), 3359, 2008 | 91 | 2008 |
| High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels G Koblmüller, RM Chu, A Raman, UK Mishra, JS Speck Journal of Applied Physics 107 (4), 2010 | 83 | 2010 |
| In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors X Liu, R Yeluri, J Kim, S Lal, A Raman, J Lu, M Laurent, C Lund, ... Applied Physics Letters 103 (5), 2013 | 35 | 2013 |
| Experimental demonstration of III-nitride hot-electron transistor with GaN base S Dasgupta, A Raman, JS Speck, UK Mishra IEEE electron device letters 32 (9), 1212-1214, 2011 | 30 | 2011 |
| Estimation of hot electron relaxation time in GaN using hot electron transistors S Dasgupta, J Lu, N Raman, C Hurni, G Gupta, JS Speck, UK Mishra Applied Physics Express 6 (3), 034002, 2013 | 14 | 2013 |
| AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy A Raman, CA Hurni, JS Speck, UK Mishra physica status solidi (a) 209 (1), 216-220, 2012 | 11 | 2012 |
| Active attack prevention for secure integrated circuits using latchup sensitive diode circuit V Jain, A Raman, ST Ventrone, JJ Ellis-Monaghan, SP Adusumilli, ... US Patent 11,171,095, 2021 | 4 | 2021 |
| Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications S Sirohi, V Jain, A Raman, B Nukala, E Veeramani, JW Adkisson, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 3 | 2018 |
| Transistor with multi-level self-aligned gate and source/drain terminals and methods JA Kantarovsky, MD Levy, J Hwang, SP Adusumilli, A Raman US Patent 11,646,351, 2023 | 2 | 2023 |
| Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications A Raman, V Jain, E Veeramani, BW Lim, US Raghunathan, Y Ngu, ... 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2021 | 2 | 2021 |
| Active x-ray attack prevention device V Jain, ST Ventrone, SP Adusumilli, JJ Ellis-Monaghan, A Raman US Patent 11,121,097, 2021 | 2 | 2021 |
| Anti-tamper x-ray blocking package JA Kantarovsky, V Jain, SP Adusumilli, A Raman, ST Ventrone, YT Ngu US Patent 11,437,329, 2022 | 1 | 2022 |
| Low-Temperature Growth and Characterization of p-GaN and Graded p-InGaN layers by MOCVD for Photovoltaic Applications M Laurent, A Raman, D Denninghoff, S Keller, U Mishra Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | 1 | 2011 |
| Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α= 0.97 S Dasgupta, A Raman, JS Speck, UK Mishra 68th Device Research Conference, 133-134, 2010 | 1 | 2010 |
| Silicon controlled rectifiers integrated into a heterojunction bipolar transistor process R Mishra, V Jain, A Raman, RJ Gauthier US Patent 10,727,327, 2020 | | 2020 |
| Selective Silicon for Raised Extrinsic Base in PA Applications P Dongmo, C Luce, V Jain, Q Liu, A Raman, J Adkisson Electrochemical Society Meeting Abstracts aimes2018, 1049-1049, 2018 | | 2018 |
| An Exploration of GaN-based Heterojunction Bipolar Transistors A Raman University of California, Santa Barbara, 2013 | | 2013 |
| Regrown-emitter AlGaN/GaN Heterojunction Bipolar Transistors grown by Ammonia-Molecular Beam Epitaxy A Raman, CS Hurni, JS Speck, UK Mishra International Workshop on Nitride Semiconductors, 2010 | | 2010 |
| AlGaN/GaN Heterojunction Bipolar Transistors grown by Ammonia-Molecular Beam Epitaxy A Raman, CS Hurni, JS Speck, UK Mishra IEEE Lester Eastman Conference on High Performance Devices, 2010 | | 2010 |
| Demonstration and Room Temperature Electrical Characteristics of a Nitride Hot Electron Transistor with GaN Base of 10 nm S Dasgupta, Nidhi, A Raman, JS Speck, UK Mishra Electronic Materials Conference, 2010 | | 2010 |
Jing LuUniversity of California, Santa Barbara在 ece.ucsb.edu 的电子邮件经过验证
