Pablo Asshoff
Pablo Asshoff
STS AG
Verified email at stssensors.com
Title
Cited by
Cited by
Year
Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene
PU Asshoff, JL Sambricio, AP Rooney, S Slizovskiy, A Mishchenko, ...
2D Materials 4 (3), 031004, 2017
602017
A spintronic source of circularly polarized single photons
P Asshoff, A Merz, H Kalt, M Hetterich
Applied Physics Letters 98 (11), 112106, 2011
272011
Spin-polarization dynamics in InGaAs quantum dots during pulsed electrical spin-injection
P Asshoff, W Löffler, J Zimmer, H Füser, H Flügge, H Kalt, M Hetterich
Applied Physics Letters 95 (20), 202105, 2009
122009
Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers
PU Asshoff, JL Sambricio, S Slizovskiy, AP Rooney, T Taniguchi, ...
Nano letters 18 (11), 6954-6960, 2018
92018
Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system
T Kobayashi, J Van Der Heijden, MG House, SJ Hile, P Asshoff, ...
Applied Physics Letters 108 (15), 152102, 2016
92016
Nuclear spin polarization in single self-assembled InGaAs quantum dots by electrical spin injection
P Asshoff, G Wüst, A Merz, D Litvinov, D Gerthsen, H Kalt, M Hetterich
Physical Review B 84 (12), 125302, 2011
82011
Electrical spin injection into single InGaAs quantum dots
M Hetterich, W Löffler, P Aßhoff, T Passow, D Litvinov, D Gerthsen, H Kalt
Advances in solid state physics, 103-114, 2009
72009
Vortex states in patterned exchange biased NiO/Ni samples
P Asshoff, K Theis-Bröhl, O Petracic, H Zabel
Journal of Applied Physics 106 (3), 033909, 2009
62009
Nuclear spin‐polarization in single InGaAs quantum dots through electrical and optical spin‐injection in spin‐LEDs
M Hetterich, P Asshoff, G Wüst, A Merz, H Kalt
physica status solidi c 8 (4), 1157-1160, 2011
12011
Site-selective molecular beam epitaxial growth of InAs quantum dots on pre-patterned GaAs substrates
M Helfrich, D Hu, DM Schaadt, J Hendrickson, G Khitrova, HM Gibbs, ...
Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010
12010
Site-selective growth of InAs quantum dots on prepatterned GaAs substrates
M Helfrich, D Hu, J Hendrickson, D Rülke, P Asshoff, H Kalt, M Hetterich, ...
Quantum Dot 2010 Conference, Nottingham, UK, 2010
12010
Spin-polarization dynamics in electrically excited single InGaAs quantum dots
P Asshoff, M Hetterich, J Zimmer, H Füser, W Löffler, H Kalt
Journal of Physics: Conference Series 200 (6), 062002, 2010
12010
Electrical spin injection into InGaAs quantum dots: single dot devices and time‐resolved studies
M Hetterich, W Löffler, P Asshoff, H Flügge, J Müller, B Westenfelder, ...
physica status solidi c 6 (2), 432-435, 2009
12009
Microwave influence on the electroluminescence of single InGaAs quantum dots
B Wolter, A Merz, R Schittny, R Schwerdt, G Wuest, P Asshoff, M Hetterich, ...
Verhandlungen der Deutschen Physikalischen Gesellschaft, 2012
2012
Spin-based Optoelectronics with Semiconductor Quantum Dots
P Asshoff
Shaker, 2012
2012
Polarizing nuclear spins in quantum dots by injection of a spin‐polarized current
P Asshoff, G Wüst, A Merz, H Kalt, M Hetterich
AIP Conference Proceedings 1399 (1), 681-682, 2011
2011
Pulsed Electrical Spin Injection into InGaAs Quantum Dots: Studies of the Electroluminescence Polarization Dynamics
P Asshoff, W Löffler, H Flügge, J Zimmer, J Müller, B Westenfelder, DZ Hu, ...
AIP Conference Proceedings 1199 (1), 383-384, 2010
2010
Critical thickness of ZnMnSe spin aligner layers on GaAs
B Westenfelder, R Doerlich, P Asshoff, DZ Hu, DM Schaadt, H Kalt, ...
Verhandlungen der Deutschen Physikalischen Gesellschaft, 2009
2009
Time-resolved electroluminescence (TREL) measurements of InAs quantum-dot spin-injection LEDs
H Fluegge, W Loeffler, P Asshoff, C Gohn, M Hetterich, H Kalt
Verhandlungen der Deutschen Physikalischen Gesellschaft 43, 2008
2008
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Articles 1–19