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Fathima John M
Fathima John M
Assistant Professor, Department of CSE, NPR College of Engineering and Technology, Natham
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Year
2D Transconductance to Drain Current Ratio Modeling of Dual Material Surrounding Gate Nanoscale SOl MOSFETs
NB Balamurugan, K Sankaranarayanan, MF John
JSTS: Journal of Semiconductor Technology and Science 9 (2), 110-116, 2009
232009
An analytical modeling of threshold voltage and subthreshold swing on dual material surrounding gate nanoscale mosfets for high speed wireless communication
NB Balamurugan, K Sankaranarayanan, P Amutha, MF John
Journal of Semiconductor Technology and Science 8 (3), 221-226, 2008
122008
2D Modeling of Dual Material Gate SOI MOSFETs for Transconductance-to-Drain current ratio (gm/Ids)
MFJ NB Balamurugan
National Conference on Networking and Information Computing, 76 - 82, 2009
2009
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