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Marc Bocquet
Marc Bocquet
UniversitÚ Aix-Marseille, IM2NP
Verified email at im2np.fr
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Cited by
Year
Robust compact model for bipolar oxide-based resistive switching memories
M Bocquet, D Deleruyelle, H Aziza, C Muller, JM Portal, T Cabout, ...
IEEE transactions on electron devices 61 (3), 674-681, 2014
1272014
Synchronous non-volatile logic gate design based on resistive switching memories
W Zhao, M Moreau, E Deng, Y Zhang, JM Portal, JO Klein, M Bocquet, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 443-454, 2013
1102013
Experimental and theoretical study of electrode effects in HfO2 based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
1032011
Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application
A Prakash, D Deleruyelle, J Song, M Bocquet, H Hwang
Applied Physics Letters 106 (23), 233104, 2015
862015
In-memory and error-immune differential RRAM implementation of binarized deep neural networks
M Bocquet, T Hirztlin, JO Klein, E Nowak, E Vianello, JM Portal, ...
2018 IEEE International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2018
812018
Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories
M Bocquet, D Deleruyelle, C Muller, JM Portal
Applied Physics Letters 98 (26), 263507, 2011
732011
Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2019
692019
Digital biologically plausible implementation of binarized neural networks with differential hafnium oxide resistive memory arrays
T Hirtzlin, M Bocquet, B Penkovsky, JO Klein, E Nowak, E Vianello, ...
Frontiers in neuroscience 13, 1383, 2020
532020
RRAM-based FPGA for" Normally off, Instantly on" Applications
O Turkyilmaz, S Onkaraiah, M Reyboz, F Clermidy, Hraziia, C Anghel, ...
Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscaleá…, 2012
532012
Reliability of charge trapping memories with high-k control dielectrics
G Molas, M Bocquet, E Vianello, L Perniola, H Grampeix, JP Colonna, ...
Microelectronic Engineering 86 (7-9), 1796-1803, 2009
492009
Bipolar ReRAM based non-volatile flip-flops for low-power architectures
S Onkaraiah, M Reyboz, F Clermidy, JM Portal, M Bocquet, C Muller, ...
10th IEEE International NEWCAS Conference, 417-420, 2012
452012
Role of Ti and Pt electrodes on resistance switching variability of HfO2-based resistive random access memory
T Cabout, J Buckley, C Cagli, V Jousseaume, JF Nodin, B De Salvo, ...
Thin Solid Films 533, 19-23, 2013
422013
Compact modeling solutions for oxide-based resistive switching memories (OxRAM)
M Bocquet, H Aziza, W Zhao, Y Zhang, S Onkaraiah, C Muller, M Reyboz, ...
Journal of Low Power Electronics and Applications 4 (1), 1-14, 2014
412014
Stochastic computing for hardware implementation of binarized neural networks
T Hirtzlin, B Penkovsky, M Bocquet, JO Klein, JM Portal, D Querlioz
IEEE Access 7, 76394-76403, 2019
382019
Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications
G Piccolboni, G Molas, JM Portal, R Coquand, M Bocquet, D Garbin, ...
2015 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2015
372015
Outstanding bit error tolerance of resistive ram-based binarized neural networks
T Hirtzlin, M Bocquet, JO Klein, E Nowak, E Vianello, JM Portal, ...
2019 IEEE International Conference on Artificial Intelligence Circuits andá…, 2019
342019
An overview of non-volatile flip-flops based on emerging memory technologies
JM Portal, M Bocquet, M Moreau, H Aziza, D Deleruyelle, Y Zhang, ...
Journal of Electronic Science and Technology 12 (2), 173-181, 2014
342014
Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
D Deleruyelle, M Putero, T Ouled-Khachroum, M Bocquet, MV Coulet, ...
Solid-State Electronics 79, 159-165, 2013
312013
Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells
WS Zhao, JM Portal, W Kang, M Moreau, Y Zhang, H Aziza, JO Klein, ...
Journal of Parallel and Distributed Computing 74 (6), 2484-2496, 2014
292014
High-density 3D monolithically integrated multiple 1T1R multi-level-cell for neural networks
E Esmanhotto, L Brunet, N Castellani, D Bonnet, T Dalgaty, L Grenouillet, ...
2020 IEEE International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2020
272020
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